SI7288DP-T1-GE3 The Vishay SI7288DP-T1-GE3 is a dual N-channel MOSFET with a 40V drain-source voltage rating and a continuous drain current of 20A. It is supplied in a PowerPAK SO-8 Dual package.
Mfr Part #:

SI7288DP-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay SI7288DP-T1-GE3 is a dual N-channel MOSFET with a 40V drain-source voltage rating and a continuous drain current of 20A. It is supplied in a PowerPAK SO-8 Dual package.
✓ Total Stock: 13,446 pcs
$ Price Range: $0.99

SI7288DP-T1-GE3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

SI7288DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Power Dissipation
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

SI7288DP-T1-GE3 Description

Short technical summary and product information.

The Vishay SI7288DP-T1-GE3 is a dual N-channel power MOSFET designed for applications requiring efficient switching. It features a drain-source voltage (Vds) of 40V and a continuous drain current (ID) of up to 20A at 25°C.

 

Key electrical characteristics include a maximum Rds(on) of 19mOhm at 10A and 10V gate-source voltage, and a typical gate charge (Qg) of 4.9nC. The device operates within a junction temperature range of -55°C to 150°C.

 

This MOSFET is housed in a PowerPAK SO-8 Dual package, suitable for surface mounting. The datasheet indicates applications such as backlight inverters for LCD displays and DC/DC converters. It is designed with TrenchFET Gen III technology and is optimized for PWM applications.

 

The device is rated for a maximum power dissipation of 15.6W at 25°C case temperature. Thermal resistance from junction-to-case (drain) is a maximum of 8°C/W, and junction-to-ambient is a maximum of 35°C/W.

SI7288DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Si7288DP Dual N-Channel MOSFET
Subcategory: Dual N-Channel

SI7288DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7288DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7288DP-T1-GE3 Features

  • Dual N-Channel 40V Power MOSFET.
  • Continuous drain current up to 20A.
  • Low Rds(on) of 19mOhm at 10A/10V.
  • Surface mount PowerPAK SO-8 Dual package.
  • Optimized for PWM applications.

SI7288DP-T1-GE3 Applications

  • Suitable for DC-DC converter circuits.
  • Used in power management for portable devices.
  • Ideal for load switching applications.
  • Applicable in battery protection circuits.

SI7288DP-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI7288DP-T1-GE3?

The drain-source voltage is 40V.

What is the continuous drain current of the SI7288DP-T1-GE3?

The continuous drain current is 20A at 25°C case temperature.

What is the Rds On for the SI7288DP-T1-GE3?

The Rds On is a maximum of 19mOhm at 10A and 10V.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI7288DP-T1-GE3 in?

It is in a PowerPAK SO-8 Dual package.

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