SI7272DP-T1-GE3 Dual N-channel 30V MOSFET in a PowerPAK SO-8 package. Rated for 25A continuous drain current with 9.3mOhm maximum on-resistance at 10V gate drive.
Mfr Part #:

SI7272DP-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
Dual N-channel 30V MOSFET in a PowerPAK SO-8 package. Rated for 25A continuous drain current with 9.3mOhm maximum on-resistance at 10V gate drive.
✓ Total Stock: 39,860 pcs
$ Price Range: $0.99

SI7272DP-T1-GE3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

SI7272DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI7272DP-T1-GE3 Description

Short technical summary and product information.

The SI7272DP-T1-GE3 is a dual N-channel logic level gate MOSFET from Vishay Dale, housed in a compact PowerPAK SO-8 Dual surface-mount package. It features a maximum drain-to-source voltage of 30V and a continuous drain current rating of 25A at a case temperature of 25°C. The device offers a low maximum on-resistance of 9.3mOhm at 15A drain current and 10V gate-source voltage, and 12.4mOhm at 4.5V, enabling efficient switching in low-voltage power conversion circuits.

 

Key electrical characteristics include a typical gate charge of 8.2nC at 10V and a maximum input capacitance of 1100pF at 15V drain-source voltage, supporting fast switching performance. The operating junction temperature range spans -55°C to 150°C. Maximum power dissipation is 22W at a case temperature of 25°C, derated to 14W at 70°C.

 

The device is surface-mountable and is supplied in a PowerPAK SO-8 Dual package. It is lead-free and halogen-free per the manufacturer's datasheet.

SI7272DP-T1-GE3 Quick Information

Product Type: MOSFET Array
Canonical Name: SI7272DP-T1-GE3 Dual N-Channel 30V MOSFET
Subcategory: Dual N-Channel

SI7272DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI7272DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7272DP-T1-GE3 Features

  • Dual N-channel 30V MOSFET array.
  • 25A continuous drain current rating.
  • 9.3mOhm maximum on-resistance at 10V.
  • Logic level gate threshold voltage.
  • PowerPAK SO-8 surface-mount package.

SI7272DP-T1-GE3 Applications

  • DC-DC converter synchronous rectification.
  • Load switching in portable electronics.
  • Battery management and protection circuits.
  • Low-voltage power distribution systems.

SI7272DP-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SI7272DP-T1-GE3?

30V.

What is the continuous drain current rating at 25°C case temperature?

25A.

What is the maximum on-resistance at 10V gate drive?

9.3mOhm at 15A drain current.

What package is the SI7272DP-T1-GE3 available in?

PowerPAK SO-8 Dual surface-mount package.

What is the operating junction temperature range?

-55°C to 150°C.

Is the SI7272DP-T1-GE3 lead-free and halogen-free?

Yes, it is lead-free and halogen-free per the datasheet.

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