SI7252DP-T1-GE3 The Vishay Dale SI7252DP-T1-GE3 is a dual N-channel MOSFET with a 100V drain-source voltage rating. It offers a continuous drain current of 36.7A and a low Rds On of 18mOhm at 15A, 10V.
Mfr Part #:

SI7252DP-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7252DP-T1-GE3 is a dual N-channel MOSFET with a 100V drain-source voltage rating. It offers a continuous drain current of 36.7A and a low Rds On of 18mOhm at 15A, 10V.
✓ Total Stock: 32,097 pcs
$ Price Range: $0.99

SI7252DP-T1-GE3 Available from 2 distributors

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✓ Non-Authorised
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31,020 pcs
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SI7252DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI7252DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7252DP-T1-GE3 is a dual N-channel power MOSFET designed for primary side switching and synchronous rectification applications. It features a 100V drain-source voltage (Vds) and a high continuous drain current capability of 36.7A at 25°C.

 

This MOSFET exhibits a low on-resistance (Rds On) of 18mOhm maximum at 15A and 10Vgs, and 19mOhm maximum at 15A and 7.5Vgs. The typical gate charge (Qg) is 12.2nC, with a maximum of 27nC at 10Vgs. The threshold voltage (Vgs(th)) is a maximum of 3.5V at 250µA.

 

Packaged in a PowerPAK SO-8 Dual surface mount package, the SI7252DP-T1-GE3 operates within a junction temperature range of -55°C to 150°C. It is rated for a maximum power dissipation of 46W at 25°C case temperature.

 

This component is suitable for DC/AC inverters and other power conversion circuits requiring efficient switching performance. It is also noted as being lead (Pb)-free and halogen-free.

SI7252DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7252DP-T1-GE3 Dual N-Channel 100V Power MOSFET
Subcategory: Dual N-Channel

SI7252DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI7252DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7252DP-T1-GE3 Features

  • Dual N-channel TrenchFET power MOSFET.
  • 100V drain-source voltage rating.
  • 36.7A continuous drain current.
  • Low Rds On of 18mOhm.
  • PowerPAK SO-8 Dual package.

SI7252DP-T1-GE3 Applications

  • Primary side switching applications.
  • Synchronous rectification circuits.
  • DC/AC inverter designs.
  • Power conversion systems.

SI7252DP-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI7252DP-T1-GE3?

The drain-source voltage (Vds) for the SI7252DP-T1-GE3 is 100V.

What is the maximum continuous drain current?

The maximum continuous drain current (Id) is 36.7A at 25°C case temperature.

What is the Rds On for this MOSFET?

The Rds On is a maximum of 18mOhm at 15A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI7252DP-T1-GE3 in?

The SI7252DP-T1-GE3 is in a PowerPAK SO-8 Dual package.

Is this MOSFET lead-free and halogen-free?

Yes, the SI7252DP-T1-GE3 is lead (Pb)-free and halogen-free.

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