SI7252ADP-T1-GE3 The Vishay Dale SI7252ADP-T1-GE3 is a dual N-channel MOSFET with a 100V drain-source voltage rating. It offers low on-resistance and is designed for system power DC/DC applications.
Mfr Part #:

SI7252ADP-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7252ADP-T1-GE3 is a dual N-channel MOSFET with a 100V drain-source voltage rating. It offers low on-resistance and is designed for system power DC/DC applications.
✓ Total Stock: 114,990 pcs
$ Price Range: $0.99

SI7252ADP-T1-GE3 Available from 3 distributors

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SI7252ADP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI7252ADP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7252ADP-T1-GE3 is a dual N-channel power MOSFET featuring TrenchFET technology and optimized for PWM applications. It boasts a 100V drain-source voltage and a maximum continuous drain current of 28.7A at 25°C case temperature.

 

Key electrical characteristics include a low Rds(on) of 18.6mOhm at 10A and 10V, and a typical gate charge of 13.1nC. The MOSFET operates within a junction temperature range of -55°C to 150°C.

 

Packaged in a PowerPAK SO-8 Dual surface-mount package, this device is suitable for system power DC/DC applications. It is also RoHS and halogen-free compliant.

SI7252ADP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Dual N-Channel 100V MOSFET
Subcategory: Dual N-Channel

SI7252ADP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI7252ADP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7252ADP-T1-GE3 Features

  • Dual N-Channel 100V Power MOSFET
  • TrenchFET power MOSFET technology
  • PWM optimized for efficiency
  • Low Rds(on) of 18.6mOhm
  • PowerPAK SO-8 Dual package

SI7252ADP-T1-GE3 Applications

  • System power DC/DC converter applications.
  • Optimized for PWM switching topologies.
  • Suitable for high-current load switching.
  • Dual MOSFET design for compact layouts.

SI7252ADP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI7252ADP-T1-GE3?

The maximum drain-source voltage is 100V.

What is the Rds(on) of the SI7252ADP-T1-GE3 at 10A and 10V?

The Rds(on) is a maximum of 18.6mOhm at 10A and 10V.

What is the continuous drain current rating for the SI7252ADP-T1-GE3 at 25°C case temperature?

The continuous drain current is 28.7A at 25°C case temperature.

What is the operating temperature range for the SI7252ADP-T1-GE3?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI7252ADP-T1-GE3 supplied in?

It is supplied in the PowerPAK SO-8 Dual package.

Is the SI7252ADP-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the SI7252ADP-T1-GE3?

The MSL is 1 Unlimited.

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