| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
80 pcs
|
80 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7234DP-T1-GE3 is a robust MOSFET characterized by its 12V Drain to Source Voltage (Vdss) and a maximum continuous drain current of 60A at TC = 25 °C. This component is also capable of handling a pulsed drain current of up to 80A, making it suitable for applications with transient high current demands. Its gate-source voltage is rated at ±12V.
Thermal management is supported by a maximum power dissipation of 46W at TC = 25 °C, with an operating junction and storage temperature range from -55°C to 150°C. The device exhibits a low on-resistance of 3.4mOhm at 20A, 4.5V, and 5.0mOhm at 10A, 2.5V, contributing to efficient power conversion. The gate charge (Qg) is 120nC at 10V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain to source voltage (Vdss) for the SI7234DP-T1-GE3 is 12V.
The operating junction and storage temperature range for the SI7234DP-T1-GE3 is -55°C to 150°C.
The continuous drain current (Id) is 60A at TC = 25 °C.
The maximum on-resistance (Rds On) is 3.4mOhm at 20A, 4.5V.
The maximum gate to source voltage (Vgs) is ±12V.
The maximum power dissipation (Pd) is 46W at TC = 25 °C.
The maximum gate charge (Qg) is 120nC at 10V.