SI7232DN-T1-GE3 The Vishay SI7232DN-T1-GE3 is a dual N-channel MOSFET with a 20V drain-source voltage rating and a continuous drain current of 25A. It features a low on-resistance of 16.4mOhm at 4.5V gate-source voltage.
Mfr Part #:

SI7232DN-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay SI7232DN-T1-GE3 is a dual N-channel MOSFET with a 20V drain-source voltage rating and a continuous drain current of 25A. It features a low on-resistance of 16.4mOhm at 4.5V gate-source voltage.
✓ Total Stock: 25,865 pcs
$ Price Range: $0.99

SI7232DN-T1-GE3 Available from 4 distributors

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SI7232DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Number of Channels
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI7232DN-T1-GE3 Description

Short technical summary and product information.

The Vishay SI7232DN-T1-GE3 is a dual N-channel power MOSFET designed for DC/DC conversion and notebook system power applications. It offers a 20V drain-source breakdown voltage and a continuous drain current of up to 25A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance of 16.4mOhm at 10A drain current and 4.5V gate-source voltage. The device also features a typical gate charge of 12nC and a logic level gate for compatibility with lower gate drive voltages. The operating temperature range is from -55°C to 150°C.

 

This MOSFET is housed in a PowerPAK 1212-8 Dual surface-mount package. The package is designed for efficient thermal management, with a junction-to-case thermal resistance of 5.4°C/W. It is supplied on a reel for automated assembly processes.

SI7232DN-T1-GE3 Quick Information

Product Type: MOSFET
Series: Si7
Canonical Name: Vishay Si7232DN-T1-GE3 Dual N-Channel 20V 25A PowerPAK 1212-8 MOSFET
Subcategory: Dual N-Channel

SI7232DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI7232DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7232DN-T1-GE3 Features

  • Dual N-channel MOSFET design.
  • 20V drain-source breakdown voltage.
  • 25A continuous drain current.
  • Low 16.4mOhm on-resistance.
  • PowerPAK 1212-8 Dual package.

SI7232DN-T1-GE3 Applications

  • DC/DC converter applications
  • Notebook system power delivery
  • Point-of-load (POL) regulation
  • Battery management in portable devices
  • Load switching in low-voltage systems

SI7232DN-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SI7232DN-T1-GE3?

The drain-source breakdown voltage is 20V.

What is the maximum continuous drain current for the SI7232DN-T1-GE3?

The maximum continuous drain current is 25A at 25°C case temperature.

What is the maximum on-resistance of the SI7232DN-T1-GE3?

The maximum on-resistance is 16.4mOhm at 10A drain current and 4.5V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the SI7232DN-T1-GE3 supplied in?

It is supplied in a PowerPAK 1212-8 Dual surface-mount package.

Is the SI7232DN-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the typical gate charge for the SI7232DN-T1-GE3?

The typical gate charge is 12nC.

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