| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
550 pcs
|
550 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7224DN-T1-GE3 is a dual N-channel MOSFET array designed for applications such as Notebook PC System Power and Low Current POL. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 6A.
Key electrical characteristics include a low on-resistance (Rds(on)) of 35mOhm at 6.5A and 10V Vgs, and a gate charge (Qg) of 14.5nC at 10V Vgs. The device operates within a temperature range of -55°C to 150°C.
This MOSFET array is packaged in the compact PowerPAK® 1212-8 Dual package, suitable for surface mounting. The TrenchFET technology contributes to its efficient performance. The ordering information indicates options for both lead-free and lead-free/halogen-free configurations.
Absolute maximum ratings include a continuous drain current of 6A at 25°C case temperature and pulsed drain current up to 30A. Power dissipation is rated at 17.8W and 23W at 25°C case temperature for the two channels respectively.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V
PowerPAK 1212-8 Dual
-55°C to 150°C (junction)
35 mΩ at VGS=10V, ID=6.5A
1V to 2.2V
6A at TC=25°C
Yes, it features logic level gate for low voltage drive.