SI7223DN-T1-GE3 The Vishay Dale SI7223DN-T1-GE3 is a dual P-channel MOSFET designed for load switching and battery protection. It features a 30V drain-source voltage and a 6A continuous drain current.
Mfr Part #:

SI7223DN-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7223DN-T1-GE3 is a dual P-channel MOSFET designed for load switching and battery protection. It features a 30V drain-source voltage and a 6A continuous drain current.
✓ Total Stock: 3,134 pcs
$ Price Range: $0.99

SI7223DN-T1-GE3 Available from 1 distributor

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✓ Non-Authorised
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3,134 pcs
3134 pcs On Request 1 On Request On Request 20+ On Request On Request

SI7223DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI7223DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7223DN-T1-GE3 is a dual P-channel power MOSFET utilizing TrenchFET Gen III technology. It is housed in a thermally enhanced PowerPAK 1212-8 Dual package, offering a 62% smaller footprint compared to SO-8 packages.

 

Key electrical specifications include a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 6A at 25°C case temperature. The on-resistance (Rds On) is rated at a maximum of 26.4mΩ at 8A and 10V gate-source voltage. The device also features a gate charge (Qg) of 40nC maximum at 10V gate-source voltage and a gate threshold voltage (Vgs(th)) of 2.5V maximum at 250µA.

 

This MOSFET is suitable for applications such as load switching, battery protection, and adapter/charger switching, particularly in hand-held and mobile devices. It operates within a junction temperature range of -55°C to 150°C. The surface mountable PowerPAK 1212-8 Dual package is designed for efficient thermal management.

 

Compliance information indicates RoHS3 compliance, and it is also lead-free and halogen-free. The moisture sensitivity level is rated as Level 1.

SI7223DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7223DN-T1-GE3 Dual P-Channel MOSFET
Subcategory: P-Channel

SI7223DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI7223DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7223DN-T1-GE3 Features

  • Dual P-Channel TrenchFET Gen III MOSFET.
  • 30V drain-source voltage rating.
  • 6A continuous drain current.
  • Low Rds On: 26.4mΩ max @ 8A, 10V.
  • Thermally enhanced PowerPAK 1212-8 Dual package.

SI7223DN-T1-GE3 Applications

  • Ideal for load switching applications.
  • Suitable for battery protection circuits.
  • Used in adapter and charger switches.
  • Designed for hand-held devices.
  • Applicable to mobile device power management.

SI7223DN-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI7223DN-T1-GE3?

The drain-source voltage (Vds) for the SI7223DN-T1-GE3 is 30V.

What is the maximum continuous drain current of the SI7223DN-T1-GE3?

The maximum continuous drain current (Id) for the SI7223DN-T1-GE3 is 6A.

What is the Rds On for the SI7223DN-T1-GE3?

The Rds On is a maximum of 26.4mΩ at 8A and 10V.

What is the package type for the SI7223DN-T1-GE3?

The SI7223DN-T1-GE3 is supplied in a PowerPAK 1212-8 Dual package.

What is the operating temperature range of the SI7223DN-T1-GE3?

The operating junction and storage temperature range is -55°C to 150°C.

Is the SI7223DN-T1-GE3 RoHS compliant?

The SI7223DN-T1-GE3 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the SI7223DN-T1-GE3?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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