| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
75,000 pcs
|
75000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7220DN-T1-GE3 is a dual N-channel MOSFET array designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 60V and a continuous drain current of 3.4A. The on-resistance (Rds On) is specified at a maximum of 60mOhm at 4.8A and 10V, with a gate charge (Qg) of 20nC at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA, and it supports logic level gate operation.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a PowerPAK® 1212-8 Dual package and utilizes surface mount technology for integration into printed circuit boards. The component is rated for 1.3W of power dissipation. Its configuration as 2 N-Channel (Dual) makes it suitable for applications requiring complementary switching or higher current handling capabilities within a compact footprint.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
PowerPAK 1212-8 Dual surface mount package.
-55°C to 150°C (junction).
3.4A.
60mOhm maximum at 4.8A and 10V gate drive.
20nC maximum at 10V.
3V maximum at 250µA.