| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,081 pcs
|
1081 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
990 pcs
|
990 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
760 pcs
|
760 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7216DN-T1-GE3 is a dual N-channel MOSFET with a drain-source voltage rating of 40V and a continuous drain current of 6A. This component is housed in a compact PowerPAK 1212-8 package, suitable for surface mounting.
Key electrical characteristics include a maximum Rds(on) of 32mOhm at 5A and 10V, and a gate charge of 19nC at 10V. The MOSFET operates within a temperature range of -50°C to 150°C (TJ).
This device is designed for applications requiring efficient switching and power management. Its dual N-channel configuration and robust specifications make it suitable for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
PowerPAK 1212-8 Dual surface mount.
-50°C to 150°C.
6A.
32mOhm maximum at 5A and 10V gate drive.
3V maximum at 250µA drain current.
19nC maximum at 10V gate-source voltage.
