SI7214DN-T1-E3 The Vishay Dale SI7214DN-T1-E3 is a dual N-channel MOSFET with a 30V drain-source voltage and a continuous drain current of 4.6A. It is optimized for high efficiency applications.
Mfr Part #:

SI7214DN-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7214DN-T1-E3 is a dual N-channel MOSFET with a 30V drain-source voltage and a continuous drain current of 4.6A. It is optimized for high efficiency applications.
✓ Total Stock: 845 pcs
$ Price Range: $0.99

SI7214DN-T1-E3 Available from 1 distributor

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✓ Non-Authorised
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845 pcs
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SI7214DN-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
Voltage

SI7214DN-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI7214DN-T1-E3 is a dual N-channel TrenchFET® Power MOSFET designed for high efficiency applications. It features a 30V drain-source voltage (Vds) and a continuous drain current (Id) of up to 4.6A at 85°C.

 

This MOSFET offers a low on-resistance (Rds(on)) of 40mOhm at 6.4A and 10V Vgs, and 47mOhm at 5.9A and 4.5V Vgs. The gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA, and the gate charge (Qg) is a maximum of 6.5nC at 4.5V Vgs. It is suitable for logic level gate applications.

 

The device is housed in a PowerPAK® 1212-8 Dual package, designed for surface mounting. The operating junction and storage temperature range is -55°C to 150°C. It is also available in a halogen-free version (Si7214DN-T1-GE3).

 

Key electrical characteristics include a pulsed drain current (Idm) of 20A and a single pulse avalanche energy (EAS) of 5mJ. Thermal performance is supported by junction-to-ambient thermal resistance ratings of 48°C/W (t ≤ 10s) and 94°C/W (steady state), and a junction-to-case (drain) thermal resistance of 5.4°C/W (steady state).

SI7214DN-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Si7214DN Dual N-Channel 30V Power MOSFET
Subcategory: N-Channel

SI7214DN-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7214DN-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7214DN-T1-E3 Features

  • Dual N-Channel TrenchFET Power MOSFET
  • 30V Drain-Source Voltage Rating
  • Low Rds(on) of 40mOhm at 10V Vgs
  • PowerPAK 1212-8 Dual Surface Mount Package
  • Optimized for High Efficiency Applications

SI7214DN-T1-E3 Applications

  • Suitable for synchronous rectification
  • Designed for high efficiency circuits
  • Used in power management designs
  • Ideal for space-constrained applications

SI7214DN-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI7214DN-T1-E3?

The maximum drain-source voltage (Vds) for the SI7214DN-T1-E3 is 30V.

What is the continuous drain current of the SI7214DN-T1-E3?

The continuous drain current (Id) is 6.4A at 25°C and 4.6A at 85°C.

What is the on-resistance (Rds(on)) of the SI7214DN-T1-E3?

The on-resistance is 40mOhm at 6.4A and 10V Vgs, and 47mOhm at 5.9A and 4.5V Vgs.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI7214DN-T1-E3 in?

The SI7214DN-T1-E3 is in a PowerPAK® 1212-8 Dual package.

Is the SI7214DN-T1-E3 RoHS compliant?

Yes, the SI7214DN-T1-E3 is RoHS3 Compliant.

Is the SI7214DN-T1-E3 halogen-free?

Yes, the SI7214DN-T1-E3 is available as halogen-free.

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