SI7196DP-T1-E3 The Vishay Dale SI7196DP-T1-E3 is an N-Channel MOSFET designed for various power applications. It offers a 30V drain-source voltage and a continuous current rating of 16A.
Mfr Part #:

SI7196DP-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7196DP-T1-E3 is an N-Channel MOSFET designed for various power applications. It offers a 30V drain-source voltage and a continuous current rating of 16A.
✓ Total Stock: 3,000 pcs
$ Price Range: $0.99

SI7196DP-T1-E3 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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3,000 pcs
3000 pcs On Request 1 On Request On Request 09+ On Request On Request

SI7196DP-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7196DP-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI7196DP-T1-E3 is an N-Channel MOSFET featuring a 30V drain-source voltage and a continuous drain current capability of 16A at 25°C case temperature. It boasts a low on-resistance of 11mOhm at 12A and 10V gate-source voltage, and 14.5mOhm at 16A and 4.5V gate-source voltage. The device operates within a temperature range of -55°C to 150°C.

 

This MOSFET is housed in a PowerPAK SO-8 surface-mount package, suitable for space-constrained designs. Key electrical characteristics include a gate charge of 38nC (max) at 10V and an input capacitance of 1577pF (max) at 15V. The maximum power dissipation is rated at 41.6W under case temperature conditions and 5W under ambient temperature conditions.

 

Applications include notebook core voltage high-side and system power low-side switching. The MOSFET technology ensures efficient switching performance with extremely low Qgd.

SI7196DP-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7196DP-T1-E3 N-Channel MOSFET
Subcategory: N-Channel

SI7196DP-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI7196DP-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7196DP-T1-E3 Features

  • 30V drain-source voltage rating.
  • 16A continuous drain current.
  • Low 11mOhm Rds On.
  • PowerPAK SO-8 surface mount package.
  • Wide -55°C to 150°C operating temperature.

SI7196DP-T1-E3 Applications

  • Suitable for notebook core voltage.
  • Used in system power applications.
  • Efficient high-side switching.
  • Efficient low-side switching.

SI7196DP-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI7196DP-T1-E3?

The drain-source voltage is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 16A at 25°C case temperature.

What is the Rds On at 12A and 10V Vgs?

The Rds On is a maximum of 11mOhm at 12A and 10V Vgs.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the SI7196DP-T1-E3 in?

It is in a PowerPAK SO-8 surface mount package.

Is this MOSFET Halogen Free?

Yes, it is Halogen Free according to IEC 61249-2-21.

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