SI7192DP-T1-GE3 The Vishay Dale SI7192DP-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 60A continuous current capability. It features a low on-resistance and is housed in a PowerPAK SO-8 package.
Mfr Part #:

SI7192DP-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7192DP-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 60A continuous current capability. It features a low on-resistance and is housed in a PowerPAK SO-8 package.
✓ Total Stock: 68,958 pcs
$ Price Range: $0.99

SI7192DP-T1-GE3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
64,571 pcs
64571 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,247 pcs
4247 pcs On Request 1 On Request On Request 17+ On Request On Request
Non-Authorised Inventory information
140 pcs
140 pcs On Request 1 On Request On Request On Request On Request On Request

SI7192DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7192DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7192DP-T1-GE3 is a high-performance N-Channel MOSFET designed for demanding applications. It offers a 30V drain-source voltage and a continuous drain current of up to 60A at 25°C case temperature.

 

Key electrical characteristics include a low on-resistance of 1.9mOhm at 20A and 10V Vgs, and a gate charge of 135nC. The device operates within a temperature range of -55°C to 150°C.

 

Packaged in a surface-mount PowerPAK SO-8, this MOSFET is suitable for applications such as VRM, POL, and high current DC/DC converters. Its TrenchFET Gen III technology ensures efficient power handling.

SI7192DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale Si7192DP N-Channel 30V PowerPAK SO-8 MOSFET

SI7192DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7192DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7192DP-T1-GE3 Features

  • 30V drain-source voltage rating.
  • 60A continuous drain current.
  • Low 1.9mOhm on-resistance.
  • PowerPAK SO-8 surface mount package.
  • N-Channel MOSFET technology.

SI7192DP-T1-GE3 Applications

  • Suitable for VRM applications.
  • Used in POL converters.
  • Ideal for high current DC/DC.
  • Low-side MOSFET applications.

SI7192DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI7192DP-T1-GE3?

The maximum drain-source voltage is 30V.

What is the continuous drain current of the SI7192DP-T1-GE3?

The continuous drain current is 60A at 25°C case temperature.

What is the on-resistance of the SI7192DP-T1-GE3?

The on-resistance is a maximum of 1.9mOhm at 20A and 10V Vgs.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI7192DP-T1-GE3 in?

It is supplied in a PowerPAK SO-8 package.

Is the SI7192DP-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

Does this MOSFET meet Halogen Free requirements?

Yes, it is Halogen-free.

Home
Account

Categories