| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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60,267 pcs
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60267 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,421 pcs
|
3421 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI7190DP-T1-GE3 is a robust N-channel enhancement mode MOSFET manufactured by Vishay. This component is engineered for efficient power switching in demanding electronic circuits. It features a high drain-source breakdown voltage of 250 volts, making it suitable for medium-to-high voltage power management systems.
Electrical performance centers around a maximum on-resistance of 118 milliohms at a gate-source voltage of 10 volts. The device supports a continuous drain current of 18.4 amperes at case temperature and handles pulsed currents up to 30 amperes. Thermal dissipation reaches 96 watts when mounted to a heatsink at 25 degrees Celsius case temperature.
Designed for reliability across extreme environments, the operating junction temperature range spans from negative 55 degrees Celsius to positive 150 degrees Celsius. The package utilizes a PPAK SO-8 footprint, providing optimized thermal performance and space-efficient surface-mount integration for modern printed circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 250 volts when measured at zero gate-source voltage and one milliampere drain current.
The component is housed in a PPAK SO-8 surface-mount package designed for enhanced thermal performance.
The device supports an operating junction temperature range from negative 55 degrees Celsius to positive 150 degrees Celsius.
The typical on-resistance measures 0.118 ohms when conducting eighteen point four amperes at a ten volt gate-source voltage.