| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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163 pcs
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163 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7186DP-T1-GE3 is a high-performance N-Channel MOSFET designed for switching and power management applications. It features a drain-source voltage of 80V and a continuous drain current of 32A, making it suitable for high-current circuits. The device is housed in a PowerPAK SO-8 package, which provides a compact form factor with surface-mount mounting capability. Its low Rds On of 12.5 milliohms at 10V Vgs ensures efficient power conduction with minimal heat dissipation. The device also offers a gate threshold voltage of 4.5V, and a maximum gate voltage of ±20V, supporting robust switching operation. It complies with RoHS3 standards and has an MSL level of 1, indicating unlimited moisture resistance. This MOSFET is ideal for use in power supplies, motor controls, and other high-current electronic systems where efficiency and reliability are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 80V.
This MOSFET is available in a PowerPAK SO-8 package for surface mount mounting.
Yes, it is RoHS3 compliant.
12.5mΩ maximum at 10A drain current and 10V gate drive.
70nC maximum at 10V gate-source voltage.
4.5V maximum at 250µA drain current.
2840pF maximum at 40V drain-source voltage.