| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,975 pcs
|
9975 pcs | On Request | 1 | On Request | On Request | 1045+ | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from Vishay Dale, part number SI7186DP-T1-E3, is designed for power applications requiring robust performance. It features a maximum drain-to-source voltage (Vdss) of 80V and can handle a continuous drain current (Id) of 32A at 25°C (Tc).
The on-resistance (Rds On) is specified at a maximum of 12.5 mOhm at 10A and 10V, indicating efficient power transfer. The gate threshold voltage (Vgs(th)) is 4.5V at 250µA, and the maximum gate-source voltage (Vgs) is ±20V.
With a maximum gate charge (Qg) of 70nC at 10V and an input capacitance (Ciss) of 2840pF at 40V, this MOSFET is suitable for various switching applications. The operating temperature range is -55°C to 150°C (TJ).
The component is packaged in a surface-mount PowerPAK SO-8, making it suitable for high-density circuit designs. It is also available on tape and reel for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V
32A
12.5 milliohm
70 nanocoulombs
-55°C to 150°C
PowerPAK SO-8