Mfr Part #:

SI7178DP-T1-GE3

Mfr Name: Vishay

The Vishay Dale SI7178DP-T1-GE3 is an N-Channel MOSFET designed for power switching applications. It offers a 100V drain-source voltage and a continuous drain current of 60A.

✓ Total Stock: 56,954 pcs

$ Price Range: $0.99

SI7178DP-T1-GE3 Available from 4 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Romaks Technologies ✓ Non-Authorised Inventory information	56,500 pcs On Request	56500 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	388 pcs On Request	388 pcs	On Request	1	On Request	On Request	09+	On Request	On Request
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	60 pcs On Request	60 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	6 pcs On Request	6 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

SI7178DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7178DP-T1-GE3 is an N-Channel MOSFET featuring a 100V drain-source voltage and a maximum continuous drain current of 60A at 25°C case temperature. It boasts a low on-resistance of 14mOhm at 10A and 10V gate-source voltage, making it suitable for efficient power switching.

This MOSFET utilizes TrenchFET technology and is packaged in a PowerPAK SO-8 surface-mount package. It operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a gate charge of 72nC and an input capacitance of 2870pF.

Applications for this device include primary side switching, point-of-load (POL) converters, and intermediate bus converters. The device is designed for high performance and reliability in demanding power electronic systems.

SI7178DP-T1-GE3 Quick Information

Product Type: MOSFET

Canonical Name: Vishay Siliconix Si7178DP N-Channel 100V Power MOSFET

SI7178DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

SI7178DP-T1-GE3 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7178DP-T1-GE3 Features

100V drain-source voltage rating.
60A continuous drain current capability.
Low 14mOhm RdsOn at 10A, 10V.
PowerPAK SO-8 surface mount package.
N-Channel MOSFET technology.

SI7178DP-T1-GE3 Applications

Ideal for DC-DC converter circuits.
Used in power management for computing systems.
Suitable for motor control applications.
Applied in switching power supplies.
Used in high-efficiency power conversion.

SI7178DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the SI7178DP-T1-GE3?

100V.

What is the maximum continuous drain current at case temperature 25°C?

60A.

What is the on-resistance of this MOSFET?

Maximum 14 mΩ at 10V gate-source voltage and 10A drain current.

What is the package type of the SI7178DP-T1-GE3?

PowerPAK SO-8 surface mount.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What is the gate threshold voltage?

Typical 2.5V, maximum 4.5V at 250µA drain current.

What is the typical gate charge?

47.5 nC.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	60A (Tc)
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	72 nC
Halogen Free	Yes
Input Capacitance (Ciss) (Max) @ Vds	2870 pF @ 50 V
Mounting Type	Surface Mount
Operating Temperature	-55 to 150 °C
Power Dissipation (Max)	6.25 W (Ta)
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4.5V