| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
31,020 pcs
|
31020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,971 pcs
|
1971 pcs | On Request | 1 | On Request | On Request | 1741+ | On Request | On Request | |
|
1,619 pcs
|
1619 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7172DP-T1-GE3 is an N-Channel power MOSFET designed for primary side switching applications in industrial settings. It features Vishay's TrenchFET® technology, offering low thermal resistance in a PowerPAK® SO-8 package.
Key electrical specifications include a 200V drain-source voltage (VDS) and a maximum continuous drain current of 25A at 25°C case temperature. The on-resistance (RDS(on)) is as low as 70mΩ at 10V gate-source voltage. The typical gate charge (Qg) is 34nC.
This MOSFET operates over a temperature range of -55°C to 150°C. It is surface-mounted and comes in a PowerPAK SO-8 package, known for its low thermal resistance. The device is 100% tested for Rg and UIS, ensuring reliability in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V.
25A at case temperature 25°C.
70 mOhm at Vgs=10V and Id=5.9A.
34 nC at Vgs=10V.
-55°C to 150°C.
PowerPAK SO-8.
96W at case temperature 25°C.