SI7172ADP-T1-RE3 The Vishay Dale SI7172ADP-T1-RE3 is an N-Channel MOSFET with a 200V drain-source voltage and a maximum on-resistance of 50mOhm at 10A, 10V. It is housed in a PowerPAK SO-8 package.
Mfr Part #:

SI7172ADP-T1-RE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7172ADP-T1-RE3 is an N-Channel MOSFET with a 200V drain-source voltage and a maximum on-resistance of 50mOhm at 10A, 10V. It is housed in a PowerPAK SO-8 package.
✓ Total Stock: 1,420 pcs
$ Price Range: $0.99

SI7172ADP-T1-RE3 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,420 pcs
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SI7172ADP-T1-RE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7172ADP-T1-RE3 Description

Short technical summary and product information.

The Vishay Dale SI7172ADP-T1-RE3 is an N-Channel MOSFET designed for various applications including fixed telecom and DC/DC converters. It features ThunderFET technology, optimizing RDS(on), Qg, Qsw, and Qoss for balanced performance.

 

Key electrical specifications include a maximum drain-source voltage (Vds) of 200V and a maximum on-resistance (Rds On) of 50mOhm at 10A and 10V gate-source voltage. The typical gate charge (Qg) is 15 nC at 10V. Continuous drain current is rated at 17.2A at 25°C case temperature and 5.3A at 25°C ambient temperature.

 

This MOSFET is packaged in a PowerPAK SO-8 surface-mount package. It operates within a junction and storage temperature range of -55°C to 150°C. The device is tested for Rg and UIS, ensuring reliability in demanding applications.

 

Applications include primary and secondary side switching and synchronous rectification. The PowerPAK SO-8 package is a leadless package with exposed copper terminals.

SI7172ADP-T1-RE3 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel 200V MOSFET
Subcategory: N-Channel

SI7172ADP-T1-RE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7172ADP-T1-RE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7172ADP-T1-RE3 Features

  • 200V drain-source voltage rating.
  • 50mOhm maximum on-resistance.
  • 15 nC typical gate charge.
  • PowerPAK SO-8 surface mount package.
  • N-Channel MOSFET technology.

SI7172ADP-T1-RE3 Applications

  • Suitable for DC/DC converters.
  • Used in fixed telecom applications.
  • Primary and secondary side switching.
  • Synchronous rectification applications.

SI7172ADP-T1-RE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SI7172ADP-T1-RE3?

200V.

What is the continuous drain current rating?

17.2A at a case temperature of 25°C.

What is the maximum on-resistance?

50mOhm at 10A drain current and 10V gate voltage.

What is the operating temperature range?

-55°C to +150°C.

What package is the SI7172ADP-T1-RE3 available in?

PowerPAK SO-8 surface mount package.

What is the typical gate charge?

15 nC typical.

What is the maximum power dissipation?

52W at a case temperature of 25°C.

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