SI7170DP-T1-GE3 The Vishay Dale SI7170DP-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 40A continuous drain current. It is housed in a PowerPAK SO-8 package.
Mfr Part #:

SI7170DP-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7170DP-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 40A continuous drain current. It is housed in a PowerPAK SO-8 package.
✓ Total Stock: 131,081 pcs
$ Price Range: $0.99

SI7170DP-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
129,143 pcs
129143 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,938 pcs
1938 pcs On Request 1 On Request On Request 10+ On Request On Request

SI7170DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7170DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7170DP-T1-GE3 is an N-Channel MOSFET designed for various applications. It features a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 40A at 25°C case temperature.

 

Key electrical characteristics include a low on-resistance (Rds(on)) of 3.4mOhm at 15A and 10V Vgs, and a gate charge (Qg) of 100nC at 10V Vgs. The threshold voltage (Vgs(th)) is 2.6V at 250µA.

 

This MOSFET operates within a junction temperature range of -55°C to 150°C. It is packaged in a surface-mount PowerPAK SO-8 configuration, suitable for compact designs. The device is also noted as being Halogen-free according to IEC 61249-2-21 definition.

SI7170DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale Si7170DP-T1-GE3 N-Channel 30V PowerPAK SO-8 MOSFET
Subcategory: N-Channel

SI7170DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7170DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7170DP-T1-GE3 Features

  • N-Channel 30V MOSFET.
  • 40A continuous drain current.
  • Low 3.4mOhm Rds(on).
  • PowerPAK SO-8 package.
  • Halogen-free construction.

SI7170DP-T1-GE3 Applications

  • Used in notebook PC core low side
  • Ideal for VRM POL voltage regulation
  • Suitable for DC-DC converter designs
  • Used in high current switching circuits
  • Designed for load switch applications

SI7170DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI7170DP-T1-GE3?

The maximum drain-source voltage is 30V.

What is the continuous drain current rating?

The continuous drain current is 40A at 25°C case temperature.

What is the on-resistance of the SI7170DP-T1-GE3?

The on-resistance is a maximum of 3.4mOhm at 15A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package type is the SI7170DP-T1-GE3 supplied in?

It is supplied in a PowerPAK SO-8 package.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

Is this MOSFET Halogen-free?

Yes, it is Halogen-free.

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