SI7164DP-T1-GE3 The Vishay Dale SI7164DP-T1-GE3 is a 60V N-Channel MOSFET designed for power switching applications. It features a low on-resistance and high current handling capability.
Mfr Part #:

SI7164DP-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7164DP-T1-GE3 is a 60V N-Channel MOSFET designed for power switching applications. It features a low on-resistance and high current handling capability.
✓ Total Stock: 7,216 pcs
$ Price Range: $0.99

SI7164DP-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,020 pcs
4020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,196 pcs
3196 pcs On Request 1 On Request On Request On Request On Request On Request

SI7164DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Voltage

SI7164DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7164DP-T1-GE3 is an N-Channel MOSFET with a drain-source breakdown voltage of 60V. It is designed for power applications, offering a low on-resistance of 6.25 mOhm at 10A and 10V Vgs, and a continuous drain current of 60A at 25°C case temperature.

 

This MOSFET utilizes TrenchFET technology and comes in a PowerPAK SO-8 surface mount package. Key electrical characteristics include a gate charge of 75 nC at 10V Vgs and an input capacitance of 2830 pF at 30V Vds. The operating temperature range is -55°C to 150°C.

 

Applications for this device include primary side switching, POL (Point of Load) converters, and intermediate bus converters. Its robust construction and electrical specifications make it suitable for demanding power management tasks.

SI7164DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale Si7164DP N-Channel 60V MOSFET
Subcategory: N-Channel

SI7164DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7164DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7164DP-T1-GE3 Features

  • 60V N-Channel MOSFET technology.
  • Low 6.25mOhm RdsOn at 10A, 10V.
  • High 60A continuous drain current.
  • PowerPAK SO-8 surface mount package.
  • Wide -55°C to 150°C operating temperature.

SI7164DP-T1-GE3 Applications

  • Used in power supply and DC-DC converter circuits.
  • Suitable for motor control and load switching.
  • Ideal for battery management systems.
  • Applicable in OR-ing and hot-swap circuits.

SI7164DP-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SI7164DP-T1-GE3?

The drain-source breakdown voltage is 60 V.

What is the maximum continuous drain current for the SI7164DP-T1-GE3?

The maximum continuous drain current is 60 A at 25°C case temperature.

What is the typical on-resistance of the SI7164DP-T1-GE3?

The typical on-resistance is 0.00625 Ohm at a gate-source voltage of 10 V.

What is the package type for the SI7164DP-T1-GE3?

The package type is PowerPAK® SO-8.

What is the operating temperature range for the SI7164DP-T1-GE3?

The operating temperature range is -55°C to 150°C.

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