| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,294 pcs
|
2294 pcs | On Request | 1 | On Request | On Request | 1247+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Siliconix SI7160DP-T1-E3 is an N-Channel MOSFET designed for high-performance applications. It features a 30V drain-source breakdown voltage and a continuous drain current rating of 20A at 25°C case temperature.
This MOSFET boasts an ultra-low on-resistance of 8.7mOhm at 15A and 10V Vgs, enabled by Vishay's High-Density TrenchFET® Gen II Power MOSFET Technology. The gate charge is typically 21nC, and the input capacitance is 2970pF at 15V.
Packaged in a low-profile PowerPAK® SO-8, this device is suitable for surface mounting. It operates across a wide temperature range of -55°C to 150°C (TJ). The MOSFET is also halogen-free, adhering to IEC 61249-2-21 standards.
Key applications include notebook computers and logic DC/DC converters where efficient power management is critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 30 V.
The maximum continuous drain current is 20A.
The on-resistance is a maximum of 8.7mOhm at 15A and 10V Vgs.
The operating junction and storage temperature range is -55°C to 150°C.
The device is in a PowerPAK SO-8 package.
Yes, the RoHS status is RoHS3 Compliant.
Yes, the device is halogen-free.