SI7157DP-T1-GE3 The Vishay Dale SI7157DP-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage and 60A continuous current rating. It features a low on-resistance of 1.6mOhm at 10V gate-source voltage.
Mfr Part #:

SI7157DP-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7157DP-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage and 60A continuous current rating. It features a low on-resistance of 1.6mOhm at 10V gate-source voltage.
✓ Total Stock: 36,903 pcs
$ Price Range: $0.99

SI7157DP-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
32,873 pcs
32873 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,030 pcs
4030 pcs On Request 1 On Request On Request On Request On Request On Request

SI7157DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7157DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7157DP-T1-GE3 is a P-Channel power MOSFET designed for various power management applications. It offers a 20V drain-source voltage and a continuous drain current capability of up to 60A.

 

Key electrical characteristics include a maximum on-resistance of 1.6mOhm at a gate-source voltage of 10V, and a gate charge of 202.5 nC typical. The device operates within a temperature range of -55°C to 150°C.

 

This MOSFET is housed in a PowerPAK SO-8 package, suitable for surface mounting. Its features include 100% Rg and UIS testing, making it a reliable choice for demanding applications.

 

Applications include adaptor switches, battery switches, load switches, and general power management within mobile computing devices.

SI7157DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7157DP-T1-GE3 P-Channel 20V Power MOSFET
Subcategory: P-Channel

SI7157DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7157DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7157DP-T1-GE3 Features

  • P-Channel 20V power MOSFET
  • 60A continuous drain current
  • Low 1.6mOhm Rds(on) at 10V
  • PowerPAK SO-8 surface mount package
  • 100% Rg and UIS tested

SI7157DP-T1-GE3 Applications

  • Used in adaptor switch circuits
  • Suitable for battery switch applications
  • Ideal for load switch functions
  • Power management in mobile computing

SI7157DP-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI7157DP-T1-GE3?

The drain-source voltage is 20V.

What is the maximum continuous drain current?

The maximum continuous drain current is 60A at 25°C case temperature.

What is the Rds(on) at Vgs = -10V?

The Rds(on) is a maximum of 0.0016 Ohms at Vgs = -10V.

What is the package type for this MOSFET?

The package type is PowerPAK SO-8.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

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