SI7155DP-T1-GE3 The Vishay Dale SI7155DP-T1-GE3 is a P-Channel MOSFET with a 40V drain-source voltage. It features a low on-resistance of 3.6mOhm at 10V gate-source voltage.
Mfr Part #:

SI7155DP-T1-GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7155DP-T1-GE3 is a P-Channel MOSFET with a 40V drain-source voltage. It features a low on-resistance of 3.6mOhm at 10V gate-source voltage.
✓ Total Stock: 82,057 pcs
$ Price Range: $0.99

SI7155DP-T1-GE3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SI7155DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7155DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7155DP-T1-GE3 is a P-Channel power MOSFET designed for various applications including adapter and charger switches, load switches, motor drive control, DC/DC converters, power supplies, and battery management.

 

This MOSFET boasts a drain-source voltage rating of 40V and a low on-resistance of 3.6mOhm at 20A and 10V Vgs. It can handle a continuous drain current of up to 100A (Tc) and 31A (Ta). The device features a typical gate charge of 107nC and an input capacitance of 12900pF.

 

Packaged in a PowerPAK SO-8 surface-mount package, the SI7155DP-T1-GE3 operates within a junction temperature range of -55°C to +150°C. Its thermal performance includes a junction-to-case thermal resistance of 1.2°C/W.

 

The MOSFET is rated for ±20V gate-source voltage and has a gate threshold voltage of 2.3V at 250µA. It is designed with TrenchFET Gen III technology, offering industry-leading RDS(on) specifications.

SI7155DP-T1-GE3 Quick Information

Product Type: P-Channel MOSFET
Canonical Name: Vishay Dale SI7155DP-T1-GE3 P-Channel 40V Power MOSFET
Subcategory: P-Channel

SI7155DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7155DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7155DP-T1-GE3 Features

  • P-Channel 40V power MOSFET.
  • Low 3.6mOhm Rds On at 10V.
  • High 100A continuous drain current.
  • PowerPAK SO-8 surface mount package.
  • TrenchFET Gen III technology.

SI7155DP-T1-GE3 Applications

  • Used in adapter and charger switches.
  • Suitable for load switch applications.
  • Ideal for motor drive control.
  • Applicable for DC/DC converters.
  • Used in power supplies and battery management.

SI7155DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating for the SI7155DP-T1-GE3?

The drain-source voltage rating is 40V.

What is the typical on-resistance of the SI7155DP-T1-GE3?

The typical on-resistance is 3.6mOhm at 20A and 10V Vgs.

What is the continuous drain current for the SI7155DP-T1-GE3?

The continuous drain current is 100A when measured at the case temperature of 25°C and 31A when measured at an ambient temperature of 25°C.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the SI7155DP-T1-GE3 supplied in?

The SI7155DP-T1-GE3 is supplied in a PowerPAK SO-8 package.

Is the SI7155DP-T1-GE3 RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the SI7155DP-T1-GE3?

The Moisture Sensitivity Level is 1 Unlimited.

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