| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30,497 pcs
|
30497 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SI7153DN-T1-GE3 is a P-Channel TrenchFET Gen. III power MOSFET. It is designed for applications such as adapters, load switches, and general power management.
Key electrical characteristics include a maximum drain-source voltage (Vds) of 30V and a continuous drain current of 18A at 25°C case temperature. The on-resistance (Rds On) is as low as 9.5mΩ at a gate-source voltage (Vgs) of -10V. The device features a gate charge (Qg) of 93nC typical at 10V Vgs.
This MOSFET is housed in a PowerPAK 1212-8 package, suitable for surface mounting. It operates within a junction temperature range of -55°C to 150°C. The device is rated for a maximum power dissipation of 52W at 25°C case temperature.
The SI7153DN-T1-GE3 is manufactured to be RoHS3 compliant and halogen-free. It is tested for Rg and UIS, ensuring high reliability for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is -30V.
The continuous drain current is -18A at case temperature 25°C.
The maximum on-resistance is 9.5mΩ at a gate-source voltage of -10V and 20A drain current.
The operating junction temperature range is -55°C to 150°C.
It is available in a PowerPAK 1212-8 surface-mount package.
The maximum gate charge is 93nC at a gate-source voltage of 10V.