Mfr Part #:

SI7149DP-T1-GE3

Mfr Name: Vishay

The Vishay Siliconix SI7149DP-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and 50A continuous current rating. It comes in a PowerPAK SO-8 package.

✓ Total Stock: 12,095 pcs

$ Price Range: $0.99

SI7149DP-T1-GE3 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	7,020 pcs On Request	7020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	3,930 pcs On Request	3930 pcs	On Request	1	On Request	On Request	15+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,145 pcs On Request	1145 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

SI7149DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Siliconix Si7149DP is a P-Channel Power MOSFET designed for battery and load switching applications. It features a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 50A at 25°C case temperature.

This MOSFET offers a low on-resistance (Rds On) of 5.2mOhm at 15A and 10V Vgs, and 5.2mOhm at 15A and 10V Vgs. The gate charge (Qg) is a maximum of 147nC at 10V Vgs, and the input capacitance (Ciss) is 4590pF at 15V Vds. It operates within a temperature range of -55°C to 150°C (TJ).

The device is housed in a PowerPAK SO-8 surface-mount package. It is also noted as being Halogen-free and Lead (Pb)-free.

Key electrical characteristics include a gate-source voltage (Vgs) of ±25V and a gate threshold voltage (Vgs(th)) of 2.5V at 250µA. The maximum power dissipation is 69W (Tc) at 25°C.

Applications include notebook computers and notebook battery packs.

SI7149DP-T1-GE3 Quick Information

Product Type: MOSFET

Canonical Name: Vishay Siliconix Si7149DP P-Channel 30V Power MOSFET

Subcategory: P-Channel

SI7149DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Lead (Pb)-free

SI7149DP-T1-GE3 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7149DP-T1-GE3 Features

P-Channel 30V Power MOSFET.
Low on-resistance of 5.2mOhm.
High continuous current rating of 50A.
PowerPAK SO-8 surface-mount package.
Halogen-free and Lead (Pb)-free.

SI7149DP-T1-GE3 Applications

Suitable for battery switching.
Ideal for load switching applications.
Used in notebook computers.
Designed for notebook battery packs.

SI7149DP-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating?

30V.

What package is this MOSFET available in?

PowerPAK SO-8.

What is the operating temperature range?

-55°C to 150°C.

What is the on-resistance of this MOSFET?

5.2mOhm maximum at 15A and 10V gate drive.

What is the gate charge?

147nC maximum at 10V.

What is the input capacitance?

4590pF maximum at 15V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Capacitance	4590 pF @ 15 V
Current	50A (Tc)
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	147 nC @ 10 V
Halogen Free	Halogen-free
Input Capacitance (Ciss) (Max) @ Vds	4590 pF @ 15 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	69W (Tc)
Rds On (Max) @ Id, Vgs	5.2mOhm @ 15A, 10V
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Temperature	- 55 to 150 °C
Temperature Coefficient	-32 mV/°C
Vgs (Max)	±25V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Voltage	2.5V