SI7148DP-T1-GE3 N-Channel MOSFET with 75V drain-source breakdown voltage and 28A continuous drain current. Features low on-resistance of 11mOhm at 10V gate drive.
Mfr Part #:

SI7148DP-T1-GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
N-Channel MOSFET with 75V drain-source breakdown voltage and 28A continuous drain current. Features low on-resistance of 11mOhm at 10V gate drive.
✓ Total Stock: 26,520 pcs
$ Price Range: $0.99

SI7148DP-T1-GE3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SI7148DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7148DP-T1-GE3 Description

Short technical summary and product information.

The SI7148DP-T1-GE3 is an N-channel TrenchFET Power MOSFET from Vishay Dale. It features a drain-source breakdown voltage of 75V and a continuous drain current of 28A at 25°C case temperature. The on-state resistance is typically 11mOhm at 10V gate drive and 14.5mOhm at 4.5V. The device offers a typical gate charge of 33nC and input capacitance of 2900pF, enabling efficient switching. It is designed for surface mount assembly in a PowerPAK SO-8 package. The operating junction temperature range is -55°C to 150°C. This MOSFET is suitable for power management applications such as DC-DC converters, load switches, and motor control.

SI7148DP-T1-GE3 Quick Information

Product Type: N-Channel MOSFET
Series: TrenchFET Power MOSFET
Canonical Name: SI7148DP-T1-GE3 N-Channel MOSFET
Subcategory: Power MOSFET

SI7148DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI7148DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7148DP-T1-GE3 Features

  • 75V drain-source breakdown voltage.
  • 28A continuous drain current rating.
  • Low on-resistance of 11mOhm at 10V.
  • TrenchFET Power MOSFET technology.
  • PowerPAK SO-8 surface mount package.

SI7148DP-T1-GE3 Applications

  • Used in DC-DC converter circuits.
  • Suitable for load switch applications.
  • Ideal for motor control systems.
  • Applicable in power management modules.

SI7148DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

75V minimum.

What is the package type?

PowerPAK SO-8 surface mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What is the continuous drain current?

28A at 25°C case temperature.

What is the on-state resistance?

11mOhm maximum at 15A and 10V gate drive.

What is the gate charge?

33nC typical at 10V gate drive.

What is the input capacitance?

2900pF typical at 35V drain-source.

Home
Account

Categories