SI7145DP-T1-GE3 The Vishay Dale SI7145DP-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and 60A continuous drain current. It features a low 2.6mOhm maximum on-resistance at 10V gate-source voltage.
Mfr Part #:

SI7145DP-T1-GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7145DP-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and 60A continuous drain current. It features a low 2.6mOhm maximum on-resistance at 10V gate-source voltage.
✓ Total Stock: 87,552 pcs
$ Price Range: $0.99

SI7145DP-T1-GE3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SI7145DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7145DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7145DP-T1-GE3 is a P-Channel TrenchFET® power MOSFET designed for various applications, including adapters and notebook computers. It offers a 30V drain-source voltage and a continuous drain current of up to 60A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance of 2.6mOhm at 25A drain current and 10V gate-source voltage, and 3.75mOhm at a lower gate-source voltage. The device features a typical gate charge of 129 nC and an input capacitance of 15660 pF.

 

This MOSFET is housed in a PowerPAK® SO-8 package, designed for surface mounting. It operates within a junction temperature range of -55°C to 150°C. The device is 100% Rg and UIS tested, ensuring high reliability for demanding applications.

SI7145DP-T1-GE3 Quick Information

Product Type: MOSFET
Series: TrenchFET
Canonical Name: Vishay Dale SI7145DP-T1-GE3 P-Channel 30V 60A PowerPAK SO-8 MOSFET
Subcategory: P-Channel

SI7145DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7145DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7145DP-T1-GE3 Features

  • P-Channel 30V Power MOSFET.
  • Low 2.6mOhm Rds On at 10V.
  • 60A continuous drain current.
  • Surface mount PowerPAK SO-8 package.
  • 100% Rg and UIS tested.

SI7145DP-T1-GE3 Applications

  • Power management in portable and battery-powered devices.
  • Load switching and DC-DC converter circuits.
  • Motor control and solenoid drive applications.
  • High-efficiency power supply designs.

SI7145DP-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI7145DP-T1-GE3?

The maximum drain-source voltage (Vds) is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 60A at 25°C case temperature.

What is the maximum on-resistance (Rds On) for this MOSFET?

The maximum on-resistance is 2.6mOhm at a drain current of 25A and a gate-source voltage of 10V.

What package type is the SI7145DP-T1-GE3 MOSFET in?

This MOSFET is supplied in a PowerPAK® SO-8 package.

What is the operating temperature range for the SI7145DP-T1-GE3?

The operating junction and storage temperature range is -55°C to 150°C.

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