Mfr Part #:

SI7139DP-T1-GE3

Mfr Name: Vishay

The Vishay Dale SI7139DP-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage rating and a continuous drain current of 40A. It features a low on-resistance of 5.5mOhm.

✓ Total Stock: 12,062 pcs

$ Price Range: $0.99

SI7139DP-T1-GE3 Available from 4 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	6,413 pcs On Request	6413 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	4,020 pcs On Request	4020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	1,412 pcs On Request	1412 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	217 pcs On Request	217 pcs	On Request	1	On Request	On Request	15+	On Request	On Request

SI7139DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7139DP-T1-GE3 is a P-Channel Power MOSFET designed for various applications. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 40A at 25°C case temperature.

Key electrical characteristics include a maximum on-resistance (Rds On) of 5.5mOhm at 15A and 10V Vgs, and a gate charge (Qg) of 146nC at 10V Vgs. The gate threshold voltage (Vgs(th)) is 2.5V at 250µA.

This MOSFET is housed in a PowerPAK SO-8 package, suitable for surface mounting. It operates within a junction temperature range of -55°C to 150°C. The device is tested for 100% Rg and UIS.

Applications include notebook computer adaptor switches, battery switches, and load switches.

SI7139DP-T1-GE3 Quick Information

Product Type: MOSFET

Canonical Name: Vishay Dale SI7139DP-T1-GE3 P-Channel 30V MOSFET

Subcategory: P-Channel

SI7139DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

SI7139DP-T1-GE3 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7139DP-T1-GE3 Features

P-Channel 30V Power MOSFET
40A continuous drain current
Low 5.5mOhm max Rds On
PowerPAK SO-8 surface mount package
Wide -55°C to 150°C operating temperature

SI7139DP-T1-GE3 Applications

Ideal for high-side load switching applications.
Used in battery protection circuits.
Suitable for DC-DC converter power stages.
Designed for power management in portable devices.

SI7139DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the SI7139DP-T1-GE3?

-30 V.

What is the continuous drain current rating?

-40 A at 25°C case temperature (package limited).

What is the on-resistance at 10V gate drive?

5.5 mOhm maximum at 15A, -10V.

What is the operating junction temperature range?

-55°C to 150°C.

What package is the device available in?

PowerPAK SO-8 surface mount package.

What is the gate threshold voltage?

Maximum 2.5 V at 250 µA drain current.

What is the maximum power dissipation at 25°C case temperature?

48 W.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	40A (Tc)
Drain to Source Voltage (Vdss)	-30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	146 nC
Input Capacitance (Ciss) (Max) @ Vds	4230 pF @ 15 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C
Power Dissipation (Max)	5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs	5.5 mOhm
SVHC Present	Not Present
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5 V @ 250µA