SI7137DP-T1-GE3 The Vishay SI7137DP-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage and 60A continuous drain current. It features a low on-resistance of 1.95mOhm at 10V Vgs.
Mfr Part #:

SI7137DP-T1-GE3

Available from 6 distributors
Mfr Name: Vishay
Vishay
The Vishay SI7137DP-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage and 60A continuous drain current. It features a low on-resistance of 1.95mOhm at 10V Vgs.
✓ Total Stock: 174,056 pcs
$ Price Range: $0.99

SI7137DP-T1-GE3 Available from 6 distributors

✓ Authorised
✓ Non-Authorised

SI7137DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7137DP-T1-GE3 Description

Short technical summary and product information.

The Vishay SI7137DP-T1-GE3 is a P-Channel power MOSFET designed for applications such as adapter switches, battery switches, and load switches. It utilizes TrenchFET® Gen III technology, offering 100% Rg and UIS testing for enhanced reliability.

 

Key electrical specifications include a maximum drain-source voltage of -20V and a continuous drain current of up to -60A at 25°C case temperature. The on-resistance is rated at a maximum of 1.95mOhm at 25A drain current and 10V gate-source voltage. The device also features a typical gate charge of 183 nC.

 

This MOSFET is housed in a PowerPAK® SO-8 package, suitable for surface mounting. It operates within a junction temperature range of -55°C to +150°C. The thermal resistance junction-to-case is a maximum of 1.2°C/W, and junction-to-ambient is a maximum of 20°C/W when mounted on a 1" x 1" FR4 board.

 

The SI7137DP-T1-GE3 is designed for efficient power switching and is tested for robustness, making it a reliable choice for demanding applications.

SI7137DP-T1-GE3 Quick Information

Product Type: MOSFET
Series: TrenchFET Gen III
Canonical Name: Vishay SI7137DP-T1-GE3 P-Channel MOSFET
Subcategory: Power MOSFET

SI7137DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7137DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7137DP-T1-GE3 Features

  • P-Channel TrenchFET Gen III MOSFET
  • Rated for -20V drain-source voltage
  • Continuous drain current up to 60A
  • Low on-resistance: 1.95mOhm max
  • PowerPAK SO-8 surface mount package

SI7137DP-T1-GE3 Applications

  • Suitable for adapter switch applications
  • Ideal for battery switch circuits
  • Used as a load switch component
  • Designed for power management tasks

SI7137DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SI7137DP-T1-GE3?

-20 V.

What is the continuous drain current rating?

-60 A at TC=25°C (package limited).

What is the on-resistance at VGS=-10V?

1.95 mΩ.

What package is the SI7137DP-T1-GE3 available in?

PowerPAK SO-8 surface mount package.

What is the operating temperature range?

-55°C to 150°C.

What is the gate threshold voltage?

1.4 V at ID=250 µA.

What is the input capacitance?

20000 pF at VDS=10V.

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