SI7135DP-T1-GE3 The Vishay Dale SI7135DP-T1-GE3 is a P-Channel MOSFET designed for load switching applications. It features a 30V drain-source voltage and a continuous drain current of 60A.
Mfr Part #:

SI7135DP-T1-GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7135DP-T1-GE3 is a P-Channel MOSFET designed for load switching applications. It features a 30V drain-source voltage and a continuous drain current of 60A.
✓ Total Stock: 30,741 pcs
$ Price Range: $0.99

SI7135DP-T1-GE3 Available from 5 distributors

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✓ Non-Authorised

SI7135DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7135DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7135DP-T1-GE3 is a P-Channel TrenchFET® power MOSFET designed for applications such as load switching in notebooks. It offers a drain-source voltage of 30V and a continuous drain current of up to 60A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance of 0.0039 Ohms at 20A and 10V Vgs, and a gate charge of 78nC typical. The MOSFET operates within a junction temperature range of -55°C to 150°C.

 

This component is housed in a PowerPAK® SO-8 package, suitable for surface mounting. It is rated for a maximum power dissipation of 104W at 25°C case temperature and 6.25W at 25°C ambient temperature. The device is RoHS3 compliant and has an MSL rating of 1.

SI7135DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7135DP-T1-GE3 P-Channel 30V 60A PowerPAK SO-8 MOSFET
Subcategory: P-Channel

SI7135DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7135DP-T1-GE3 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7135DP-T1-GE3 Features

  • P-Channel TrenchFET® power MOSFET.
  • 30V drain-source voltage rating.
  • 60A continuous drain current.
  • Low on-resistance: 0.0039 Ohm max.
  • PowerPAK® SO-8 surface mount package.

SI7135DP-T1-GE3 Applications

  • Notebook load switch applications
  • P-Channel power management circuits
  • Battery protection in portable devices
  • DC/DC converter load switching
  • High-side switching for notebooks

SI7135DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI7135DP-T1-GE3?

The drain-source voltage is 30V.

What is the continuous drain current of the SI7135DP-T1-GE3?

The continuous drain current is 60A at 25°C case temperature.

What is the maximum on-resistance for the SI7135DP-T1-GE3?

The maximum on-resistance is 0.0039 Ohms at 20A and 10V Vgs.

What package type is the SI7135DP-T1-GE3 MOSFET in?

The SI7135DP-T1-GE3 is in a PowerPAK® SO-8 package.

What is the operating temperature range for the SI7135DP-T1-GE3?

The operating junction and storage temperature range is -55°C to 150°C.

Is the SI7135DP-T1-GE3 RoHS compliant?

The SI7135DP-T1-GE3 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the SI7135DP-T1-GE3?

The Moisture Sensitivity Level is 1.

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