| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
120,533 pcs
|
120533 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,439 pcs
|
1439 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI7123DN-T1-GE3 is a P-Channel enhancement-mode MOSFET from Vishay Dale, designed for medium-power switching applications. It features a drain-source breakdown voltage of -20V and a continuous drain current rating of 10.2A at 25°C ambient temperature. The device offers a low maximum on-resistance of 10.6mΩ at VGS = -4.5V and ID = -15A, enabling efficient power handling.
Key electrical characteristics include a gate-source threshold voltage of 1V at 250µA drain current, input capacitance of 3729pF at Vds = 10V, and a maximum gate charge of 90nC at Vgs = 4.5V. The MOSFET can handle pulsed drain currents up to 40A and has a maximum power dissipation of 1.5W at 25°C ambient (3.8W at higher temperature).
The device is housed in a PPAK1212-8 surface-mount package, suitable for automated assembly. It is commonly used in load switching, battery protection, and power management circuits where P-Channel topology simplifies drive circuitry.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-20 V
10.2 A at 25°C ambient temperature
10.6 mΩ at VGS = -4.5 V and ID = -15 A
1 V at ID = -250 µA
1.5 W at 25°C ambient temperature
3729 pF at Vds = 10 V
90 nC at Vgs = 4.5 V