| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,140 pcs
|
4140 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Halogen Free | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
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The Vishay Dale SI7121ADN-T1-GE3 is a P-Channel MOSFET designed for power management applications. It features a maximum drain-source voltage of 30V and a low on-resistance of 15mOhm when driven at 10V with 7A.
This MOSFET offers a continuous drain current of 12A at 25°C ambient temperature and 18A at 25°C case temperature. Its input capacitance is 1870pF at 15V, and the gate charge is 50nC at 10V. The device operates within a temperature range of -50°C to 150°C.
Packaged in a compact PowerPAK 1212-8 surface-mount case, the SI7121ADN-T1-GE3 is suitable for applications requiring efficient power switching. Its TrenchFET technology and low thermal resistance contribute to reliable performance in demanding environments.
Key electrical characteristics include a gate threshold voltage of 2.5V at 250µA and a maximum gate-source voltage of ±25V. The maximum power dissipation is 3.5W at 25°C ambient and 27.8W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-30V maximum.
PowerPAK 1212-8 surface-mount package.
-50°C to 150°C junction temperature.
15mOhm maximum at Vgs=10V, Id=7A.
2.5V maximum at Id=250µA.
-12A at ambient temperature (Ta=25°C) and -18A at case temperature (Tc=25°C).
50nC at Vgs=10V.