| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,100 pcs
|
8100 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
20 pcs
|
20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from Vishay Dale, part number SI7120DN-T1-GE3, offers a drain-to-source voltage of 60V and a continuous drain current of 6.3A at ambient temperature. Its on-resistance (Rds On) is a maximum of 19mOhm when measured at 10A drain current and 10V gate-source voltage. The gate charge (Qg) is 45nC maximum at 10V gate-source voltage, with a gate threshold voltage (Vgs(th)) of 3.5V maximum at 250µA drain current.
The device utilizes MOSFET technology and comes in a Surface Mount package, specifically the PowerPAK® 1212-8. This configuration is suitable for applications requiring efficient power switching and control.
Key electrical characteristics include its 60V breakdown voltage and low on-resistance, making it suitable for various power management tasks. The N-Channel configuration is standard for many switching applications. The component is designed for through-hole mounting.
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are based on available database information and may require verification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
It comes in a PowerPAK 1212-8 surface mount package.
The maximum on-resistance is 19mOhm at 10A drain current and 10V gate-source voltage.
The maximum gate charge is 45nC at 10V gate-source voltage.
The maximum gate threshold voltage is 3.5V at 250µA drain current.
The continuous drain current is 6.3A at ambient temperature.
It is an N-Channel MOSFET.