| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,526 pcs
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1526 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Vishay Dale SI7120DN-T1-E3 is an N-Channel MOSFET belonging to the Transistors - FETs, MOSFETs - Single category. It operates with a drain-to-source voltage of up to 60V and can handle a continuous drain current of 6.3A at ambient temperature.
The MOSFET has a maximum on-resistance of 19mOhm at 10A and 10V, with a gate charge of 45nC at 10V. The gate threshold voltage is a maximum of 3.5V at 250µA. The technology used is Metal Oxide Semiconductor Field-Effect Transistor (MOSFET).
Designed for surface mount applications, this component comes in a PowerPAK® 1212-8 package. Its RoHS status is RoHS3 Compliant, and it has a Moisture Sensitivity Level (MSL) of 1 Unlimited. The REACH status is REACH Unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 60V.
The maximum on-resistance is 19mΩ at a drain current of 10A and gate-source voltage of 10V.
The continuous drain current is 6.3A at ambient temperature.
The maximum gate charge is 45nC at a gate-source voltage of 10V.
The maximum gate threshold voltage is 3.5V at a drain current of 250µA.
It is available in a PowerPAK® 1212-8 surface-mount package.
Yes, it is an N-channel metal-oxide MOSFET.