BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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106,353 pcs
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106353 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The SI7120DN-T1 from Vishay is an N-Channel MOSFET designed for power switching applications. It offers a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 6.3A at 25°C. The MOSFET exhibits a low on-resistance (Rds On) of 19 mOhm when measured at 10A and 10V gate-source voltage, contributing to efficient power transfer.
This device utilizes MOSFET (Metal Oxide) technology and is part of the TrenchFET® series. It operates within a temperature range of -55°C to 150°C. The gate charge (Qg) is a maximum of 45nC at 10V.
The SI7120DN-T1 is supplied in a surface-mount PowerPAK® 1212-8 package, suitable for compact electronic designs. Its RoHS status is compliant, and it has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
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| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 60V.
The continuous drain current (Id) is 6.3A at 25°C.
The on-resistance (Rds On) is a maximum of 19 mOhm at 10A and 10V.
The operating temperature range is -55°C to 150°C.
The SI7120DN-T1 is in a surface-mount PowerPAK® 1212-8 package.
The RoHS status is compliant.
The Moisture Sensitivity Level (MSL) is 1.