SI7120ADN-T1-GE3 The Vishay Dale SI7120ADN-T1-GE3 is an N-Channel MOSFET with a 60V drain-source voltage and 6A continuous drain current. It is designed for surface mounting in a PowerPAK® 1212-8 package.
Mfr Part #:

SI7120ADN-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7120ADN-T1-GE3 is an N-Channel MOSFET with a 60V drain-source voltage and 6A continuous drain current. It is designed for surface mounting in a PowerPAK® 1212-8 package.
✓ Total Stock: 64,813 pcs
$ Price Range: $0.99

SI7120ADN-T1-GE3 Available from 3 distributors

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64,571 pcs
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146 pcs
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SI7120ADN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7120ADN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7120ADN-T1-GE3 is a single N-Channel MOSFET from the MOSFET (Metal Oxide) technology family. It offers a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 6A at 25°C ambient temperature. The Rds On is a maximum of 21mOhm at 9.5A and 10V gate-source voltage, with a drive voltage range of 4.5V to 10V. The gate charge (Qg) is 45nC at 10V, and the gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA. The maximum gate-to-source voltage is ±20V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It has a maximum power dissipation of 1.5W (Ta) and is housed in a Surface Mount PowerPAK® 1212-8 package. The component is RoHS3 compliant, has an MSL of 1, and is REACH unaffected. Its primary application is as a single N-Channel MOSFET in various electronic circuits requiring efficient switching and power handling capabilities.

SI7120ADN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7120ADN-T1-GE3 N-Channel MOSFET
Subcategory: Single

SI7120ADN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7120ADN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7120ADN-T1-GE3 Features

  • 60V drain-to-source voltage rating.
  • 6A continuous drain current capability.
  • Low 21mOhm maximum Rds On.
  • Surface mount PowerPAK® 1212-8 package.
  • Wide -55°C to 150°C operating temperature.

SI7120ADN-T1-GE3 Applications

  • Suitable for power switching circuits.
  • Used in DC-DC converters.
  • Applicable in load management.
  • Ideal for battery-powered devices.

SI7120ADN-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage?

The maximum drain-to-source voltage is 60V.

What is the package type?

The device comes in a PowerPAK 1212-8 surface-mount package.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (junction).

What is the continuous drain current rating?

The continuous drain current is 6A at 25°C ambient temperature, and up to 9.5A when driven with 10V gate voltage.

What is the typical on-resistance?

The maximum on-resistance is 21mOhm at Vgs=10V and Id=9.5A.

What is the gate threshold voltage?

The maximum gate threshold voltage is 3V at a drain current of 250µA.

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