SI7119DN-T1-GE3 The Vishay Dale SI7119DN-T1-GE3 is a P-Channel MOSFET with a 200V drain-source breakdown voltage and a continuous drain current of 3.8A. It features a low profile PowerPAK 1212-8 package.
Mfr Part #:

SI7119DN-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7119DN-T1-GE3 is a P-Channel MOSFET with a 200V drain-source breakdown voltage and a continuous drain current of 3.8A. It features a low profile PowerPAK 1212-8 package.
✓ Total Stock: 122,432 pcs
$ Price Range: $0.99

SI7119DN-T1-GE3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

SI7119DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7119DN-T1-GE3 Description

Short technical summary and product information.

The SI7119DN-T1-GE3 is a P-Channel MOSFET from Vishay Dale, rated for a drain-source breakdown voltage of 200V. It supports a continuous drain current of 3.8A at case temperature 25°C and features a maximum on-resistance of 1.05 Ohms at 10V gate drive. This device is designed for high-voltage switching applications where low gate charge and fast switching are required.

 

Key electrical characteristics include a gate charge of 25 nC at 10V, input capacitance of 666 pF at 50V drain-source, and a maximum power dissipation of 52W at case temperature 25°C. The gate threshold voltage is 4V at 250µA, and the recommended drive voltage range is 6V to 10V.

 

The MOSFET is housed in a surface-mount PowerPAK 1212-8 package, which provides excellent thermal performance. The operating junction temperature range is -50°C to 150°C, allowing use in harsh environments. The device is halogen-free.

 

With its combination of high voltage rating, moderate current capability, and low on-resistance, this P-Channel MOSFET is suitable for power management and load switching in industrial and automotive systems.

SI7119DN-T1-GE3 Quick Information

Product Type: MOSFET
Series: Si71xxdx
Canonical Name: Vishay Dale SI7119DN-T1-GE3 P-Channel 200V MOSFET
Subcategory: P-Channel

SI7119DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7119DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7119DN-T1-GE3 Features

  • P-Channel MOSFET with 200V drain-source breakdown.
  • 3.8A continuous drain current rating.
  • Maximum on-resistance of 1.05 Ohm at 10V.
  • Gate charge of 25 nC for efficient switching.
  • Surface mount PowerPAK 1212-8 package.

SI7119DN-T1-GE3 Applications

  • Active clamp in DC/DC power supplies
  • Used in intermediate power conversion stages
  • Suitable for high-voltage P-Channel switching
  • Designed for surface mount power applications

SI7119DN-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SI7119DN-T1-GE3?

200 V minimum at Vgs = 0 V and Id = -250 µA.

What is the package type for the SI7119DN-T1-GE3?

PowerPAK 1212-8 surface-mount package.

What is the operating temperature range?

-50°C to 150°C (junction temperature).

What is the on-resistance of the SI7119DN-T1-GE3?

1.05 Ohms maximum at 1A drain current and 10V gate voltage.

What is the gate charge of this MOSFET?

25 nC maximum at 10V gate-source voltage.

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