SI7119DN-T1-E3 The Vishay SI7119DN-T1-E3 is a P-Channel MOSFET with a 200V drain-source voltage and a continuous drain current of 3.8A. It features a low Rds On of 1.05 Ohm at 10V.
Mfr Part #:

SI7119DN-T1-E3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay SI7119DN-T1-E3 is a P-Channel MOSFET with a 200V drain-source voltage and a continuous drain current of 3.8A. It features a low Rds On of 1.05 Ohm at 10V.
✓ Total Stock: 20,330 pcs
$ Price Range: $0.99

SI7119DN-T1-E3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
18,000 pcs
18000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
Non-Authorised Inventory information
1,165 pcs
1165 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,165 pcs
1165 pcs On Request 1 On Request On Request On Request On Request On Request

SI7119DN-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7119DN-T1-E3 Description

Short technical summary and product information.

The Vishay SI7119DN-T1-E3 is a P-Channel MOSFET designed for power applications. It offers a high drain-source breakdown voltage of 200V and a continuous drain current capability of 3.8A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance of 1.05 Ohms at a gate-source voltage of 10V and a gate charge of 25 nC. The device operates within a temperature range of -50°C to 150°C.

 

This MOSFET is housed in a PowerPAK® 1212-8 surface-mount package, known for its small size and low profile. It is suitable for applications such as active clamp circuits in intermediate DC/DC power supplies. The device is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

SI7119DN-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: P-Channel 200V MOSFET
Subcategory: P-Channel

SI7119DN-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI7119DN-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7119DN-T1-E3 Features

  • P-Channel 200V MOSFET.
  • 3.8A continuous drain current.
  • 1.05 Ohm Rds On at 10V.
  • PowerPAK 1212-8 package.
  • RoHS3 compliant.

SI7119DN-T1-E3 Applications

  • Active clamp circuits in intermediate DC/DC power supplies.
  • High voltage switching applications rated at 200V.
  • Compact designs utilizing low profile surface mount packages.
  • Power stages requiring moderate continuous drain current capabilities.
  • Systems needing reliable avalanche energy handling characteristics.

SI7119DN-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SI7119DN-T1-E3?

The drain-source breakdown voltage is 200V.

What is the maximum continuous drain current?

The maximum continuous drain current is 3.8A at 25°C case temperature.

What is the Rds On at 10V gate-source voltage?

The Rds On is a maximum of 1.05 Ohms at 1A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -50°C to 150°C.

What package type is the SI7119DN-T1-E3 in?

It is in a PowerPAK® 1212-8 surface mount package.

Is the SI7119DN-T1-E3 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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