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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SI7117DN-T1-GE3 is a P-Channel power MOSFET designed for applications such as active clamp circuits in DC/DC power supplies. It utilizes Vishay's TrenchFET® technology, offering low thermal resistance and a low profile of 1.07 mm within the PowerPAK® 1212-8 package.
Key electrical specifications include a maximum drain-source voltage (Vds) of 150V and a continuous drain current (Id) of 2.17A at 25°C case temperature. The on-resistance (RDS(on)) is rated at a maximum of 1.2 Ohm at VGS = -10V. The device operates over a temperature range of -55°C to +150°C.
The PowerPAK® 1212-8 package is designed for surface mounting. This MOSFET is suitable for designs requiring efficient power switching and compact form factors.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the SI7117DN-T1-GE3 is 150V.
The continuous drain current (Id) is 2.17A at 25°C case temperature.
The maximum on-resistance (RDS(on)) is 1.2 Ohm at a gate-source voltage of -10V and a drain current of 500mA.
The SI7117DN-T1-GE3 is in a PowerPAK 1212-8 package.
The operating junction and storage temperature range is -55°C to +150°C.