SI7116DN-T1-GE3 N-Channel MOSFET with 40V drain-source voltage and 10.5A continuous drain current. Features low on-resistance of 7.8mOhm at 10V gate drive.
Mfr Part #:

SI7116DN-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
N-Channel MOSFET with 40V drain-source voltage and 10.5A continuous drain current. Features low on-resistance of 7.8mOhm at 10V gate drive.
✓ Total Stock: 1,923 pcs
$ Price Range: $0.99

SI7116DN-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,875 pcs
1875 pcs On Request 1 On Request On Request 1913+ On Request On Request
Non-Authorised Inventory information
48 pcs
48 pcs On Request 1 On Request On Request On Request On Request On Request

SI7116DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7116DN-T1-GE3 Description

Short technical summary and product information.

The SI7116DN-T1-GE3 is an N-Channel MOSFET manufactured by Vishay Dale. It is designed for power switching applications requiring a drain-source voltage rating of 40V and a continuous drain current of 10.5A at 25°C ambient temperature. The device features a maximum on-resistance of 7.8mOhm at a gate-source voltage of 10V and drain current of 16.4A, enabling efficient power conversion.

 

The gate threshold voltage is typically 2.5V at 250µA, and the total gate charge is 23nC at 4.5V gate drive. The MOSFET is housed in a surface-mount PowerPAK 1212-8 package, which offers low thermal resistance. The junction-to-ambient thermal resistance is 33°C/W for transient conditions (≤10s) and 81°C/W for steady state, while the junction-to-case thermal resistance is 2.4°C/W. The operating junction temperature range is -55°C to 150°C.

 

This component is suitable for DC-DC converters, load switching, and power management circuits where compact footprint and low conduction losses are required. The device is RoHS3 compliant, REACH unaffected, and halogen-free as per the ordering information.

SI7116DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel 40V Fast Switching MOSFET

SI7116DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7116DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7116DN-T1-GE3 Features

  • N-Channel MOSFET with 40V drain-source voltage.
  • Low on-resistance of 7.8mOhm at 10V gate drive.
  • Maximum continuous drain current of 10.5A.
  • Surface mount PowerPAK 1212-8 package.
  • Operating temperature range -55°C to 150°C.

SI7116DN-T1-GE3 Applications

  • Suitable for DC-DC converter circuits.
  • Used in power management and load switching.
  • Applicable in battery protection systems.
  • Ideal for low-voltage power distribution.

SI7116DN-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SI7116DN-T1-GE3?

The drain-source voltage rating is 40V.

What package type does the SI7116DN-T1-GE3 use?

It uses a PowerPAK 1212-8 surface mount package.

What is the operating temperature range of the SI7116DN-T1-GE3?

The operating junction temperature range is -55°C to 150°C.

What is the gate threshold voltage of the SI7116DN-T1-GE3?

The maximum gate threshold voltage is 2.5V at a drain current of 250µA.

What is the on-resistance of the SI7116DN-T1-GE3?

The maximum on-resistance is 7.8mOhm at a drain current of 16.4A and gate-source voltage of 10V.

What is the continuous drain current rating of the SI7116DN-T1-GE3?

The continuous drain current is 10.5A at 25°C ambient temperature.

What is the gate charge of the SI7116DN-T1-GE3?

The maximum gate charge is 23nC at a gate-source voltage of 4.5V.

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