SI7116BDN-T1-GE3 The Vishay Dale SI7116BDN-T1-GE3 is an N-Channel MOSFET with a 40V drain-source voltage and a maximum continuous drain current of 65A (Tc). It features a low on-resistance of 7.4mOhm at 16A, 10V.
Mfr Part #:

SI7116BDN-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7116BDN-T1-GE3 is an N-Channel MOSFET with a 40V drain-source voltage and a maximum continuous drain current of 65A (Tc). It features a low on-resistance of 7.4mOhm at 16A, 10V.
✓ Total Stock: 13,020 pcs
$ Price Range: $0.99

SI7116BDN-T1-GE3 Available from 1 distributor

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SI7116BDN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7116BDN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7116BDN-T1-GE3 is a single N-Channel MOSFET designed for various power applications. It offers a drain-source voltage of 40V and a continuous drain current rating of 65A at 25°C case temperature, and 18.4A at 25°C ambient temperature.

 

Key electrical characteristics include a maximum on-resistance of 7.4mOhm at 16A and 10V gate-source voltage, and a gate charge (Qg) of 48nC at 10V. The MOSFET operates within a temperature range of -55°C to 150°C (TJ).

 

This component is housed in a PowerPAK® 1212-8 package and utilizes surface mount technology. Its features, such as low Rds(on) and optimized gate charge, make it suitable for applications like synchronous rectification and high power density DC/DC converters.

SI7116BDN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7116BDN-T1-GE3 N-Channel 40V PowerPAK 1212-8 MOSFET
Subcategory: N-Channel

SI7116BDN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7116BDN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7116BDN-T1-GE3 Features

  • 40V drain-source voltage rating.
  • 65A continuous drain current (Tc).
  • 7.4mOhm maximum Rds On.
  • Surface mount PowerPAK 1212-8 package.
  • N-Channel MOSFET technology.

SI7116BDN-T1-GE3 Applications

  • Suitable for synchronous rectification.
  • Used in synchronous buck converters.
  • Ideal for high power density DC/DC.
  • Applicable for load switching.

SI7116BDN-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI7116BDN-T1-GE3?

The drain-source voltage is 40V.

What is the maximum continuous drain current?

The maximum continuous drain current is 65A when measured at the case temperature (Tc = 25°C).

What is the Rds On (Max) at 16A and 10V?

The maximum Rds On is 7.4mOhm at 16A and 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What type of MOSFET is the SI7116BDN-T1-GE3?

It is an N-Channel MOSFET.

What package is the SI7116BDN-T1-GE3 in?

It is in a PowerPAK® 1212-8 package.

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