| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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13,020 pcs
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13020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| FET Type | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
The Vishay Dale SI7116BDN-T1-GE3 is a single N-Channel MOSFET designed for various power applications. It offers a drain-source voltage of 40V and a continuous drain current rating of 65A at 25°C case temperature, and 18.4A at 25°C ambient temperature.
Key electrical characteristics include a maximum on-resistance of 7.4mOhm at 16A and 10V gate-source voltage, and a gate charge (Qg) of 48nC at 10V. The MOSFET operates within a temperature range of -55°C to 150°C (TJ).
This component is housed in a PowerPAK® 1212-8 package and utilizes surface mount technology. Its features, such as low Rds(on) and optimized gate charge, make it suitable for applications like synchronous rectification and high power density DC/DC converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 40V.
The maximum continuous drain current is 65A when measured at the case temperature (Tc = 25°C).
The maximum Rds On is 7.4mOhm at 16A and 10V.
The operating temperature range is -55°C to 150°C (TJ).
It is an N-Channel MOSFET.
It is in a PowerPAK® 1212-8 package.