| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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92,333 pcs
|
92333 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7114DN-T1-GE3 is an N-Channel MOSFET featuring TrenchFET Gen II technology and a low-profile PowerPAK 1212-8 package. This device is rated for a 30V drain-source voltage and offers a low on-resistance of 7.5mOhm at a gate-source voltage of 10V. It can handle a continuous drain current of 11.7A at 25°C ambient temperature, with a maximum power dissipation of 1.5W under the same conditions.
Designed for applications such as synchronous rectification, this MOSFET operates within a junction temperature range of -55°C to 150°C. The PowerPAK 1212-8 package is surface-mount compatible and provides excellent thermal performance. The device is suitable for various power management tasks requiring efficient switching and low conduction losses.
Key electrical characteristics include a gate charge of 19nC at 4.5V and a gate threshold voltage of 3V at 250µA. The maximum gate-source voltage is ±20V. The component is RoHS3 compliant and has a Moisture Sensitivity Level of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 30V.
The device is available in the PowerPAK 1212-8 surface-mount package.
The junction temperature range is -55°C to 150°C.
The maximum on-resistance is 7.5mOhm at Vgs = 10V and Id = 18.3A.
The continuous drain current is 11.7A at 25°C ambient temperature.
The maximum gate threshold voltage is 3V at Id = 250 µA.
The maximum power dissipation is 1.5W at 25°C ambient temperature.