SI7114DN-T1-GE3 The Vishay Dale SI7114DN-T1-GE3 is an N-Channel MOSFET designed for fast switching applications. It offers a 30V drain-source voltage and a low on-resistance of 7.5mOhm.
Mfr Part #:

SI7114DN-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7114DN-T1-GE3 is an N-Channel MOSFET designed for fast switching applications. It offers a 30V drain-source voltage and a low on-resistance of 7.5mOhm.
✓ Total Stock: 92,333 pcs
$ Price Range: $0.99

SI7114DN-T1-GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
92,333 pcs
92333 pcs On Request 1 On Request On Request 18+ On Request On Request

SI7114DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7114DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7114DN-T1-GE3 is an N-Channel MOSFET featuring TrenchFET Gen II technology and a low-profile PowerPAK 1212-8 package. This device is rated for a 30V drain-source voltage and offers a low on-resistance of 7.5mOhm at a gate-source voltage of 10V. It can handle a continuous drain current of 11.7A at 25°C ambient temperature, with a maximum power dissipation of 1.5W under the same conditions.

 

Designed for applications such as synchronous rectification, this MOSFET operates within a junction temperature range of -55°C to 150°C. The PowerPAK 1212-8 package is surface-mount compatible and provides excellent thermal performance. The device is suitable for various power management tasks requiring efficient switching and low conduction losses.

 

Key electrical characteristics include a gate charge of 19nC at 4.5V and a gate threshold voltage of 3V at 250µA. The maximum gate-source voltage is ±20V. The component is RoHS3 compliant and has a Moisture Sensitivity Level of 1.

SI7114DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7114DN-T1-GE3 N-Channel MOSFET
Subcategory: N-Channel

SI7114DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7114DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7114DN-T1-GE3 Features

  • 30V Drain-Source Voltage rating.
  • Low 7.5mOhm on-resistance.
  • 11.7A continuous drain current.
  • Surface mount PowerPAK 1212-8 package.
  • N-Channel MOSFET technology.

SI7114DN-T1-GE3 Applications

  • Ideal for synchronous rectification.
  • Suitable for power management circuits.
  • Efficient power switching applications.

SI7114DN-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage (Vdss) of the SI7114DN-T1-GE3?

The maximum drain-to-source voltage is 30V.

What package does the SI7114DN-T1-GE3 come in?

The device is available in the PowerPAK 1212-8 surface-mount package.

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

What is the typical on-resistance (Rds on) of the SI7114DN-T1-GE3?

The maximum on-resistance is 7.5mOhm at Vgs = 10V and Id = 18.3A.

What is the maximum continuous drain current?

The continuous drain current is 11.7A at 25°C ambient temperature.

What is the gate threshold voltage (Vgs(th))?

The maximum gate threshold voltage is 3V at Id = 250 µA.

What is the maximum power dissipation?

The maximum power dissipation is 1.5W at 25°C ambient temperature.

Home
Account

Categories