SI7114ADN-T1-GE3 The Vishay Dale SI7114ADN-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage rating. It is housed in a PowerPAK 1212-8 package and rated for 35A continuous current.
Mfr Part #:

SI7114ADN-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7114ADN-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage rating. It is housed in a PowerPAK 1212-8 package and rated for 35A continuous current.
✓ Total Stock: 193,150 pcs
$ Price Range: $0.99

SI7114ADN-T1-GE3 Available from 4 distributors

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150,667 pcs
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SI7114ADN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Voltage

SI7114ADN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7114ADN-T1-GE3 is a single N-Channel Power MOSFET designed for applications such as synchronous rectification. It features a 30V drain-source voltage (VDS) and a low on-resistance of 7.5mOhm at 18A and 10V VGS.

 

This MOSFET offers a continuous drain current of 35A at 25°C case temperature and 18A at 25°C ambient temperature. It operates within a junction temperature range of -55°C to 150°C. The device is packaged in a PowerPAK 1212-8 surface-mount package.

 

Key electrical characteristics include a gate charge (Qg) of 32nC maximum at 10V VGS and an input capacitance (Ciss) of 1230pF maximum at 15V VDS. The threshold voltage (VGS(th)) is 2.5V maximum at 250µA.

 

With its robust specifications and surface-mount design, the SI7114ADN-T1-GE3 is suitable for power management circuits requiring efficient switching and low conduction losses.

SI7114ADN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7114ADN-T1-GE3 N-Channel 30V PowerPAK 1212-8 MOSFET
Subcategory: N-Channel

SI7114ADN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7114ADN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7114ADN-T1-GE3 Features

  • N-Channel 30V Power MOSFET
  • Low Rds(on) of 7.5mOhm at 18A, 10V
  • High continuous current rating of 35A
  • PowerPAK 1212-8 surface-mount package
  • Suitable for synchronous rectification applications

SI7114ADN-T1-GE3 Applications

  • Ideal for synchronous rectification
  • Used in power supply circuits
  • Suitable for DC-DC converters
  • Efficient power switching applications

SI7114ADN-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage?

30V.

What is the maximum continuous drain current at 25°C case temperature?

35A.

What is the typical gate charge?

10.2 nC typical.

What is the on-resistance at 10V gate drive?

7.5 mOhm maximum.

What is the operating temperature range?

-55°C to +150°C.

What package is this device available in?

PowerPAK 1212-8 surface mount package.

What is the input capacitance?

1230 pF at 15V.

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