SI7113DN-T1-GE3 The Vishay Dale SI7113DN-T1-GE3 is a P-Channel MOSFET with a 100V drain-source voltage and a continuous drain current of 13.2A. It is housed in a compact PowerPAK 1212-8 package.
Mfr Part #:

SI7113DN-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7113DN-T1-GE3 is a P-Channel MOSFET with a 100V drain-source voltage and a continuous drain current of 13.2A. It is housed in a compact PowerPAK 1212-8 package.
✓ Total Stock: 152,416 pcs
$ Price Range: $0.99

SI7113DN-T1-GE3 Available from 4 distributors

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✓ Non-Authorised
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100,020 pcs
100020 pcs On Request 1 On Request On Request On Request On Request On Request
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50,000 pcs
50000 pcs On Request 1 On Request On Request On Request On Request On Request
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1,321 pcs
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1,075 pcs
1075 pcs On Request 1 On Request On Request 1449+ On Request On Request

SI7113DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7113DN-T1-GE3 Description

Short technical summary and product information.

This Vishay Dale SI7113DN-T1-GE3 is a P-Channel MOSFET designed for power applications. It offers a drain-source breakdown voltage of 100V and a continuous drain current rating of up to 13.2A at 25°C case temperature.

 

The MOSFET features a low on-resistance of 134mOhm at 4A and 10V Vgs, and a gate threshold voltage of 3V at 250µA. The operating temperature range is -50°C to 150°C (TJ).

 

It is packaged in a PowerPAK 1212-8 surface-mount package, known for its small size and low profile. The device is suitable for applications requiring efficient power switching and control.

 

Available in lead-free and halogen-free options, this MOSFET is designed to meet modern environmental standards.

SI7113DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale Si7113DN P-Channel 100V MOSFET
Subcategory: Transistors - FETs

SI7113DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI7113DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7113DN-T1-GE3 Features

  • P-Channel 100V MOSFET
  • 13.2A continuous drain current
  • Low Rds On: 134mOhm at 4A, 10V
  • PowerPAK 1212-8 package
  • Halogen-free option available

SI7113DN-T1-GE3 Applications

  • Active clamp in DC/DC supplies
  • Intermediate power applications
  • Efficient power switching
  • Compact design integration

SI7113DN-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 100V.

What is the maximum continuous drain current?

The maximum continuous drain current is 13.2A at 25°C case temperature.

What is the on-resistance of this MOSFET?

The on-resistance is a maximum of 134mOhm at 4A and 10V Vgs.

What is the operating temperature range?

The operating junction and storage temperature range is -50°C to 150°C.

What package type is this MOSFET in?

This MOSFET is in a PowerPAK 1212-8 package.

Is this component RoHS compliant?

Yes, it is RoHS3 Compliant.

Is a halogen-free option available?

Yes, a halogen-free option is available.

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