SI7113DN-T1-E3 The Vishay Dale SI7113DN-T1-E3 is a P-Channel MOSFET with a 100V drain-source voltage and a continuous drain current of 13.2A. It is housed in a surface-mount PowerPAK 1212-8 package.
Mfr Part #:

SI7113DN-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7113DN-T1-E3 is a P-Channel MOSFET with a 100V drain-source voltage and a continuous drain current of 13.2A. It is housed in a surface-mount PowerPAK 1212-8 package.
✓ Total Stock: 30,279 pcs
$ Price Range: $0.99

SI7113DN-T1-E3 Available from 1 distributor

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SI7113DN-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7113DN-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI7113DN-T1-E3 is a P-Channel MOSFET designed for power applications. It features a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of up to 13.2A at 25°C case temperature. The MOSFET exhibits a low on-resistance (Rds On) of 134mOhm at 4A and 10V gate-source voltage.

 

This device is suitable for applications requiring active clamping in intermediate DC/DC power supplies. It operates within a temperature range of -50°C to 150°C (TJ) and is packaged in a compact PowerPAK® 1212-8 surface-mount package. The low profile and small size of the PowerPAK package make it ideal for space-constrained designs.

 

Key electrical characteristics include a gate charge (Qg) of 55nC at 10V and an input capacitance (Ciss) of 1480pF at 50V. The MOSFET is rated for a maximum power dissipation of 52W at 25°C case temperature and 3.7W at 25°C ambient temperature when surface-mounted on a 1" x 1" FR4 board.

SI7113DN-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si7113DN P-Channel 100V MOSFET
Subcategory: Power MOSFET

SI7113DN-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

SI7113DN-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7113DN-T1-E3 Features

  • P-Channel 100V MOSFET
  • 13.2A continuous drain current
  • Low Rds On: 134mOhm at 4A, 10V
  • PowerPAK 1212-8 surface mount package
  • Wide operating temperature range

SI7113DN-T1-E3 Applications

  • Active clamp in DC/DC supplies
  • Power switching applications
  • Intermediate voltage regulation
  • Compact electronic designs

SI7113DN-T1-E3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SI7113DN-T1-E3?

The drain-source breakdown voltage is 100V.

What is the maximum continuous drain current of the SI7113DN-T1-E3?

The maximum continuous drain current is 13.2A at 25°C case temperature.

What is the Rds On (Max) for the SI7113DN-T1-E3?

The Rds On is a maximum of 134mOhm at 4A and 10V.

What is the operating temperature range for this MOSFET?

The operating temperature range is -50°C to 150°C (TJ).

What package type is the SI7113DN-T1-E3 in?

It is in a PowerPAK 1212-8 surface mount package.

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