SI7113ADN-T1-GE3 The Vishay Dale SI7113ADN-T1-GE3 is a P-Channel MOSFET with a 100V drain-source voltage and a continuous drain current of 10.8A. It features a low on-resistance of 132mOhm at 3.8A and 10V.
Mfr Part #:

SI7113ADN-T1-GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7113ADN-T1-GE3 is a P-Channel MOSFET with a 100V drain-source voltage and a continuous drain current of 10.8A. It features a low on-resistance of 132mOhm at 3.8A and 10V.
✓ Total Stock: 43,120 pcs
$ Price Range: $0.99

SI7113ADN-T1-GE3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SI7113ADN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7113ADN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7113ADN-T1-GE3 is a P-Channel power MOSFET designed for various applications. It offers a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 10.8A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds(on)) of 132mOhm when measured at 3.8A drain current and 10V gate-source voltage. The gate-source threshold voltage (Vgs(th)) is 2.6V at 250µA. The device has a gate charge (Qg) of 16.5nC maximum at 10V and an input capacitance (Ciss) of 515pF maximum at 50V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 27.8W at 25°C case temperature. It utilizes TrenchFET® technology for enhanced performance.

 

The SI7113ADN-T1-GE3 is housed in a PowerPAK® 1212-8 surface-mount package. It is suitable for applications such as active clamp circuits in intermediate DC/DC power supplies, LED lighting, and load switching.

SI7113ADN-T1-GE3 Quick Information

Product Type: MOSFET
Series: Si7113adn
Canonical Name: Vishay Dale SI7113ADN-T1-GE3 P-Channel 100V Power MOSFET
Subcategory: P-Channel

SI7113ADN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7113ADN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7113ADN-T1-GE3 Features

  • P-Channel 100V power MOSFET.
  • Low on-resistance: 132mOhm max.
  • Continuous drain current 10.8A.
  • PowerPAK 1212-8 surface mount package.
  • Suitable for DC/DC converters and LED lighting.

SI7113ADN-T1-GE3 Applications

  • Ideal for high-side load switch designs.
  • Used in DC-DC converter synchronous rectifiers.
  • Suitable for motor control bridge circuits.
  • Applied in battery protection switch modules.
  • Deployed in industrial power distribution units.

SI7113ADN-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

100 V

What is the continuous drain current rating?

10.8 A at case temperature

What is the on-resistance at a 10V gate drive?

132 mΩ maximum

What package type does this MOSFET use?

PowerPAK 1212-8 surface mount

What is the operating junction temperature range?

-55°C to 150°C

What is the maximum power dissipation rating?

27.8 W at case temperature

Home
Account

Categories