| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7112DN-T1-E3 is a high-performance N-Channel MOSFET designed for fast switching applications. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 17.8A at 25°C case temperature.
Key electrical characteristics include a low on-resistance (Rds(on)) of 7.5mOhm at 17.8A and 10V Vgs, and 8.2mOhm at 17.0A and 4.5V Vgs. The gate-source voltage (Vgs) ranges from -12V to +12V, with a gate threshold voltage (Vgs(th)) of 1.5V at 250µA.
This MOSFET is housed in a compact PowerPAK® 1212-8 package, suitable for surface mounting. It operates within a temperature range of -50°C to 150°C (TJ). The device is compliant with RoHS3 standards and is halogen-free.
Applications include synchronous rectification and other power management circuits where efficient switching and low on-resistance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30 V.
It is a PowerPAK 1212-8 surface mount package.
-50°C to 150°C.
Maximum on-resistance is 7.5 mOhm at Vgs=10V and Id=17.8A.
17.8 A at case temperature 25°C when surface mounted on 1x1 FR4 board.
Yes, according to the datasheet it is Halogen-free.
Maximum 1.5V at 250µA drain current.