| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
217,831 pcs
|
217831 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
15,253 pcs
|
15253 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI7110DN-T1-GE3 is an N-Channel enhancement-mode MOSFET from Vishay Dale, designed for high-efficiency power management applications. It is rated for a maximum drain-to-source voltage of 20V and a continuous drain current of 13.5A at 25°C ambient temperature.
Key electrical characteristics include a maximum on-resistance of 5.3mOhm at VGS = 10V and ID = 21.1A, and a typical gate charge of 21nC at VGS = 4.5V. The device can handle pulsed drain currents up to 60A and features a maximum junction temperature range of -55°C to 150°C.
The MOSFET is housed in a PowerPAK 1212-8 surface-mount package, offering excellent thermal performance with a junction-to-case thermal resistance of 2.4°C/W. It is suitable for load switching, DC-DC conversion, and other low-voltage power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
13.5A at 25°C ambient temperature.
5.3mOhm maximum at VGS = 10V and ID = 21.1A.
PowerPAK 1212-8 surface mount package.
-55°C to 150°C (junction).