SI7110DN-T1-E3 The Vishay Dale SI7110DN-T1-E3 is an N-Channel MOSFET with a 20V drain-source voltage and 13.5A continuous current. It is housed in a PowerPAK 1212-8 package.
Mfr Part #:

SI7110DN-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7110DN-T1-E3 is an N-Channel MOSFET with a 20V drain-source voltage and 13.5A continuous current. It is housed in a PowerPAK 1212-8 package.
✓ Total Stock: 2,758 pcs
$ Price Range: $0.99

SI7110DN-T1-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,758 pcs
2758 pcs On Request 1 On Request On Request 1412+ On Request On Request

SI7110DN-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7110DN-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI7110DN-T1-E3 is a fast-switching N-Channel MOSFET designed for applications like synchronous rectification and synchronous buck converters. It features a drain-source voltage of 20V and a continuous drain current of 13.5A at 25°C ambient temperature.

 

Key electrical characteristics include a low Rds On of 5.3mOhm at 21.1A and 10V Vgs, and a gate charge of 21nC at 4.5V Vgs. The MOSFET operates within a temperature range of -55°C to 150°C (TJ).

 

This device utilizes the TrenchFET Gen II technology and comes in a low-profile PowerPAK 1212-8 package, measuring 3.30 mm by 3.30 mm. The surface mountable package offers a low thermal resistance, contributing to efficient heat dissipation. The operating temperature range is -55°C to 150°C.

SI7110DN-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7110DN-T1-E3 N-Channel 20V Fast Switching MOSFET
Subcategory: N-Channel

SI7110DN-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI7110DN-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7110DN-T1-E3 Features

  • N-Channel 20V fast switching MOSFET.
  • Low Rds On of 5.3mOhm at 10V Vgs.
  • Continuous drain current of 13.5A.
  • Compact PowerPAK 1212-8 package.
  • Optimized for PWM applications.

SI7110DN-T1-E3 Applications

  • Used in synchronous rectification.
  • Suitable for synchronous buck converters.
  • Ideal for power management circuits.

SI7110DN-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vdss) of the SI7110DN-T1-E3?

20 V.

What is the peak drain current capability?

Pulsed drain current maximum is 60 A.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

What package is the SI7110DN-T1-E3 available in?

PowerPAK 1212-8 surface mount package.

What is the typical on-resistance?

5.3 mOhm at VGS = 10 V, ID = 21.1 A; 7.8 mOhm at VGS = 4.5 V, ID = 17.4 A.

What is the gate threshold voltage range?

1.5 V (minimum) to 2.5 V (maximum) at VDS = VGS, ID = 250 µA.

Home
Account

Categories